Development of intense pulsed heavy ion beam and its application to ion implantation technology for next generation semiconductor

为了提高强脉冲离子束的纯度，提出并研制了一种新型脉冲离子束加速器——双极脉冲加速器（BPA）。双酚a系统利用磁绝缘加速间隙，并与双极脉冲操作。在漂移管中施加电压约为±100 kV、脉冲持续时间约为70 ns的双极脉冲时，在距阳极表面下游50 mm处，通过双极脉冲的负脉冲和电流密度为40 A/cm^2、脉冲持续时间为30 ns的脉冲离子束，离子成功地从接地的阳极加速到第一间隙的漂移管中。此外，部分离子束在第二间隙被双极脉冲的正脉冲再次加速到接地阴极。在阴极表面下游30 mm处获得了峰值离子电流密度为10 A/cm^2、脉冲持续时间为30 ns的脉冲离子束。

In order to improve the purity of the intense pulsed ion beam a new type of a pulsed ion beam accelerator named "bipolar pulse accelerator (BPA)" has been proposed and developed. The BPA system utilizes a magnetically insulated acceleration gap and is operated with the bipolar pulse. When the bipolar pulse with voltage of about ±100 kV and pulse duration of about 70 ns was applied to the drift tube, the ions were successfully accelerated from the grounded anode to the drift tube in the 1st gap by the negative pulse of the bipolar pulse and the pulsed ion beam with current density of 40 A/cm^2 and pulse duration of 30 ns was obtained at 50 mm downstream from the anode surface. In addition, part of the ion beam was again accelerated toward the grounded cathode in the 2nd gap by the positive pulse of the bipolar pulse. The pulsed ion beam with the peak ion current density of 10 A/cm^2 and the beam pulse duration of 30 ns was obtained at 30 mm downstream from the cathode surface.