Development of Magnetic thin film devices with large saturation magnetization and high anisotropy field with resonance frequency above 10 GHz

用溅射粒子斜入射的方法在Ru衬底上制备的FeCoB薄膜具有高的面内磁各向异性H_k=500Oe。存在各向异性残余应力，这是面内磁各向异性的根源。这种各向异性的晶体结构可能会影响Ru底层上FeCoB层的各向异性残余应力。约6at.%的B含量适合引起这种各向异性残余应力。具有Si/NiFe的多层结构有效地减少了Bloch类型的磁畴壁。H_k为500Oe的FeCoB薄膜的共振频率为9.2 GHz。

FeCoB films prepared on Ru underlayer using oblique incidence of sputtered particles have high in-plane magnetic anisotropy H_k of 500 Oe. There is an anisotropic residual stress which is an origin of the in-plane magnetic anisotropy. Such anistotropic crystalline structures may affect to the anisotropic residual stress in FeCoB layer on Ru underlayer. B content of around 6 at.% is appropriate to induce such an anisotropic residual stress. Multilayered structure with Si/NiFe is effective to reduce Bloch type domain walls. The FeCoB films with H_k of 500 Oe revealed 9. 2 GHz of resonance frequency.