Development of Low Temperature Bonding Technology for Glass and Polymer Substrates in Ambient Air for Future Three-Dimensional MEMS Packaging
Development of Low Temperature Bonding Technology for Glass and Polymer Substrates in Ambient Air for Future Three-Dimensional MEMS Packaging
批准号:
21760269
负责人:
SHIGETO Akitsu
金额:
$2.91万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2010
中文摘要
在本研究中,在环境类空气条件下,在150℃下实现了Cu、玻璃(包括SiO2和石英)和聚酰亚胺的homo/heterogeneous键合技术。为了同时与这些材料产生良好的粘结性,使用蒸汽辅助表面活化方法创建了兼容的桥接层。在这种情况下,水蒸气被引入到材料的原子清洁表面,它有助于创造粘合剂水性化合物。桥接层的化学结构和厚度仅随单位面积和时间内与表面碰撞的水分子数量而可调,从而使整个表面具有较高的结合能,同时Cu-Cu界面具有良好的导电性。此外,无铜衬底和聚酰亚胺绝缘体的结合也证明了该工艺的高可行性。
英文摘要
In this study, a homo/heterogeneous bonding technology for Cu, glass (including both SiO2 and quartz), and polyimide was realized at 150 oC in ambient air-like condition. In order to create a good bondability to these materials at the same time, a compatible bridging layer was created with the vapor-assisted surface activation method. In this, water vapor was introduced onto the atomically clean surfaces of materials and it helped create the adhesive aqueous compounds. The chemical structure and thickness of the bridging layers are tunable only with the number of water molecules colliding with the surface in unit area and time, which resulted in high binding energy on entire surface and good electric conduction at Cu-Cu interface at the same time. Moreover, a Cu bumpless substrate and a polyimide insulator was bonded to demonstrate high feasibility of this process.
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Room Temperature Wafer Bonding of Si and SiN by Nano-Adhesion Layer Method
纳米粘合层法室温晶圆键合 Si 和 SiN
DOI:
--
发表时间:
期刊:
アクセプト済み, Scripta Materialia.
影响因子:
--
作者:
[R.Kondou, C.Wang, A.Shigetou, T.Suga]
通讯作者:
T.Suga
Modified Diffusion Bonding for Both Cu and SiO2 at 150C in Ambient Air
150C 环境空气中 Cu 和 SiO2 的改良扩散键合
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[Akitsu Shigetou, Tadatomo Suga]
通讯作者:
Tadatomo Suga
Modified Diffusion Bonding of Chemical Mechanical Polishing (CMP)-Cu at 150C at Ambient Pressure
化学机械抛光 (CMP)-Cu 在 150C、环境压力下的改良扩散键合
DOI:
--
发表时间:
2009
期刊:
Applied Physics Express Vol.2, No.5
影响因子:
--
作者:
[A.Shigetou, T.Suga]
通讯作者:
T.Suga
Direct interconnection of chemical mechanical polishing (CMP)-Cu thin films at 150C in ambient air
环境空气中 150C 化学机械抛光 (CMP)-Cu 薄膜的直接互连
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[Akitsu Shigetou, T.Suga]
通讯作者:
T.Suga
Modified Diffusion Bond Process for Chemical Mechanical Polishing (CMP)-Cu at 150C in Ambient Air
化学机械抛光 (CMP)-Cu 在 150C 环境空气中的改良扩散键合工艺
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[Akitsu Shigetou, Tadatomo Suga]
通讯作者:
Tadatomo Suga
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