Approach from crystal growth to overcome limits of Si integrated circuits

为了在Si衬底上制备Ⅲ-V族沟道MOSFET或GaN基LED，研究了低角度入射微通道外延（LAIMCE）技术。LAIMCE对于使用分子束外延在横向生长区域中大大减少位错是有用的。采用金属有机分子束外延技术，利用LAIMCE成功地生长了宽度大于4 μ m的a面GaN横向生长材料。虽然GaN模板衬底中存在大量的位错，高达每平方厘米10的10次方，但TEM观察到在横向生长区域中没有位错或缺陷。对选择性生长掩模材料及LAIMCE的其他重要基础技术进行了研究。

In order to fabricate III-V channel MOSFET or GaN-based LED on Si substrates, low-angle incidence microchannel epitaxy (LAIMCE) was investigated. LAIMCE is useful to greatly reduce dislocations in the laterally grown areas using molecular beam epitaxy. A lateral growth of a-plane GaN more than 4um-wide was successfully grown by metal-organic molecular beam epitaxy using LAIMCE. No dislocation or defect was observed in the laterally grown area by TEM though a large number of dislocations, as large as 10 to the 10th power per square cm, exists in the GaN template substrate. Mask materials for selective growth or other important fundamental technologies for LAIMCE were also investigated.