Development ofnovel heterostructure materials for high performance green-range semiconductor laser diodes

为实现高性能绿色半导体激光二极管，开发了新型包层材料。研究了在InP衬底上的II-VI化合物半导体和通常用作透明电极的氧化铟锡（ITO）作为包层材料。提出了ITO p包覆层的新型LD结构。通过对LD结构的理论分析，表明可以实现足够的光波导。研究了ITO和接触层材料的沉积条件，揭示了器件高性能的最佳沉积条件

Novel cladding layer materials were developed to realize high-performance green semiconductor laser diodes (LDs). II-VI compound semiconductors on InP substrates and indium tin oxide (ITO) usually used as a transparent electrode were investigated as the cladding layer materials. New LD structures with ITO p-cladding layers wereproposed. From theoretical analysis of the LD structure, it was shown that sufficient optical waveguide could be realized. Deposition conditions of ITO and contact layer materials were investigated, which revealed optimum conditions for high device performances