Electronic Structure and Impurity Concentration for Conducting Region of Proton Conductor by Soft-X-ray Spectroscopy

用软X射线能谱研究了射频磁控溅射制备的质子导体BaCe0.9Y0.1O3.8HIN薄膜的电子结构。薄膜的晶化温度为500℃，对应于质子传导的温度区域。薄膜的质子导电性与大块晶体的质子导电性一致。用X射线吸收光谱观察到禁带区的空穴能级和受主能级。在导带底部也观察到了氧缺陷感生状态。从定量分析中，作者阐明了在晶格中产生了30%的空穴和70%的氧空位，这与受主浓度有关。

The electronic structure ofproton conductor BaCe0.9Y0.1O3.8 hin film prepared by RF magnetron sputtering have probed by soft-X-ray spectroscopy. The thin film was crystallized at 500℃, which corresponds to the temperature region of proton conduction. The proton conductivity of the thin film accords with that of the bulk crystal. The hole and acceptor level were observed in the band gap region by X-ray absorption spectroscopy. The oxygen defect-induced state was also observed at the bottom of the conduction band. From the quantitative analysis, the author have clarified that hole of 30% and oxygen vacancy of 70% is created in the crystal lattice against of acceptor concentration.