Investigation of Plasma Source Using a Control System Equipped with a Plasma Simulator for Next-Generation Processing

在半导体制造过程中，等离子体加工是一项必不可少的技术，该工艺中使用的等离子体要求直径大、温度低、均匀性高。本文的研究重点是满足这些需求的微波激发等离子体，研究目标是空间剖面控制。介绍了两种控制均匀性的新技术；一种是在工作过程中可以改变辐射场分布的分段槽天线，另一种是可以预测所需径向密度剖面所需的微波功率分布的超模拟。建立了包括这些技术的控制系统，并发现对产生的等离子体的轮廓控制是有效的。

In the manufacturing process of semiconductors, plasma processing is an essential technology, and the plasma used in the process is required to be of large diameter, low temperature, and high uniformity. This research focuses on the microwave-excited plasma that meets these needs, and the research target is a spatial profile control. Two novel techniques are introduced to control the uniformity; one is a segmented slot antenna that can change distribution of the radiated field during operation, and the other is a hyper simulation that can predict microwave power distribution necessary for a desired radial density profile. The control system including these techniques is constructed and found to be effective for the profile control of produced plasmas.