Distribution, Segregation and Dose-loss of Dopants in Deca-nanometer SOI Structures

为了未来超大规模集成十纳米器件（特征尺寸约为10纳米）的发展，考虑了绝缘体上硅结构，硅层厚度约为50纳米。这些层最终可能包含硅锗异质结。除了载流子迁移率外，这类材料的一个主要问题是掺杂剂与周围材料界面的偏析。埃尔兰根-恩贝格大学的“电子器件主席（LEB）”将通过创新的实验和理论方法的结合来研究这种分离效应，这种方法只有在国际研究团队的合作下才有可能实现。在工作计划中，LEB将执行所需样品处理的大部分工作。然后，他们的掺杂分布将在北卡罗莱纳州立大学进行表征，结果将用于LEB，以开发表面偏析的动力学模式。这些研究将进一步利用俄亥俄州立大学的从头算模拟。在合作中，LEB还将支持瑞典Kista皇家技术大学的技术工作，该大学将为英国莱斯特DeMontfort大学的迁移率测量制造十纳米器件。

For the development of future ultra-large-scale-integrated deca-nanometer devices (with feature sizes of some 10 nm) silicon-on-insulator structures are taken into consideration with thicknesses of the silicon layer of about 50 nm. These layers may eventually contain silicon-germanium heterojunctions. A main problem for such materials besides the charge-carrier mobility is the segregation of dopants to interfaces to the surrounding materials. The "chair of electron devices (LEB)" of the University Erlangen-Nürnberg will investigate such segregation effects by a combination of innovative experimental and theoretical approaches which become possible only by the cooperation of an international research team. Within the work program, the LEB will perform a substantial part of the processing of the samples required. Their dopant distribution will then be characterized at the North Carolina State University and, the results will be used at the LEB to develop a kinetic mode for surface segregation. These investigations will further exploit the ab-initio simulations of the Ohio State University. Within the cooperation, the LEB will also support technological work at the Royal Technical University Kista / Sweden where deca-nanometer devices will be made for mobility measurements at the DeMontfort University Leicester / UK.