Zinc oxide transparent transistor and its application to stacked image sensor

本研究的目的是利用宽禁带氧化物半导体实现透明薄膜晶体管。在分析氧化物半导体体相和绝缘体与氧化物半导体交界处晶格缺陷对晶体管电学性能和可靠性影响的基础上，研究了氧化物半导体的缺陷钝化方法，得到了不受可见光照射影响的透明薄膜晶体管，并用透明信号读出电路成功地实现了堆叠式有机图像传感器。

The aim of this research is to achieve transparent thin-film transistor by using wide-gap oxide semiconductors. Based on the analysis of the influence of lattice defects existing in an oxide semiconductor bulk and at an interface between insulator and oxide semiconductor on electrical properties and reliability of the transistor, we investigated the defect passivation method of oxide semiconductors.As a consequence of this research, transparent thin-film transistor, which was not influenced by visible light irradiation, could be achieved, and the stacked organic image sensor has been successively demonstrated with transparent signal readout circuits.