Design and construction of radiation thermometry systems under extremely nonequilibrium temperature condition
Design and construction of radiation thermometry systems under extremely nonequilibrium temperature condition
批准号:
23560511
负责人:
IUCHI Tohru
金额:
$3.24万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013
中文摘要
辐射测温,即基于物体发出的辐射亮度测量的非接触式测温方法,在科学和工业的各个领域都有应用。然而,由于背景辐射(光学噪声)很强,物体与加热器(如高强度灯)之间的温差很大,在极不平衡的温度条件下使用这种方法会遇到困难。我提出了一种通过引入噪声因子的参数来定量评估背景辐射的方法,并显著降低了背景辐射。在此基础上,建立了包括发射率补偿辐射测温在内的综合辐射测温系统的设计方法。
英文摘要
Radiation thermometry, that is, a non-contact temperature measurement method based on the radiance measurement emitted by an object is available in various fields of science and industry. This method, however, meets difficulties when it is used under the extremely nonequilibrium temperature condition that is caused by the large temperature difference between the object and heaters such as high intensity lamps, because of strong background radiance (optical noise).I proposed a method to evaluate background radiance quantitatively by introducing a parameter defined as a noise factor and to reduce it significantly as well. Based on this method, I established a method for designing an integrated radiation thermometry system including the emissivity-compensated radiation thermometry.
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DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Y. Toyoda, T. Seo and T. Iuchi]
通讯作者:
T. Seo and T. Iuchi
シリコンウエハのin-situ放射測温法における背光雑音の遮蔽
硅片原位辐射测温中背光噪声的屏蔽
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[瀬尾朋博, 岩崎友幸, 井内徹]
通讯作者:
井内徹
放射測温法における背光放射の定量評価
辐射测温中背光辐射的定量评估
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[岩崎友幸, 井内徹]
通讯作者:
井内徹
背光雑音を分離したシリコンウエハのin-situ放射測温の検討
背光噪声分离的硅片原位辐射温度测量研究
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[瀬尾朋博, 岩崎友幸, 井内徹]
通讯作者:
井内徹
SiウエハのIn-situ温度測定技術
硅片原位测温技术
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[瀬尾朋博, 岩崎友幸, 井内徹, 井内徹, 井内徹, 井内徹, 井内徹, 井内徹]
通讯作者:
井内徹
共 18 条
In-situ radiation thermometry of semiconductor materials and its calibration system
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批准号:20560403
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.91万
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财政年份:2008
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负责人:IUCHI Tohru
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依托单位:
Research of the in-situ temperature measurement system for silicon wafers.
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批准号:17560377
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.18万
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财政年份:2005
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负责人:IUCHI Tohru
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依托单位:
Study on the method for the measurements of both emissivity and temperature of semiconductor materials.
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批准号:15560364
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.05万
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财政年份:2003
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负责人:IUCHI Tohru
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依托单位:
Research on a method of temperature measurement for a silicon semiconductor wafer
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批准号:13650468
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.79万
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财政年份:2001
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负责人:IUCHI Tohru
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依托单位:
MODELING OF EMISSIVITIES OF METALS AND SEMICONDUCTORS
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批准号:10650416
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.86万
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财政年份:1998
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负责人:IUCHI Tohru
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依托单位:
RESEARCH ON RADIATION THERMOMETRY OF NEAR ROOM TEMPERATURE
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批准号:06650481
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.47万
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财政年份:1994
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负责人:IUCHI Tohru
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依托单位:
海外基金