In-situ radiation thermometry of semiconductor materials and its calibration system

半导体材料原位辐射测温及其校准系统

• 批准号: 20560403
• 负责人: IUCHI Tohru
• 金额: $ 2.91万
• 依托单位: Toyo University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20560403/
• 关键词: 放射測温; 放射率; 偏光; 半導体; 酸化膜; 窒化膜; バンドギャップ; シリコンウエハ; in-situ計測; 背光雑音; 薄膜

Two radiation thermometry, namely, the simultaneous measurement of emissivity and temperature by use of the ratio of polarized radiances and the method due to an emissivity-invariant condition have successfully been developed. These methods are available irrespective of different resistivity from 0.01 to 2000cm, wide spectra from 0.9 to 4.5 micrometers and temperature range over 900 K. Moreover, the two non-contact temperature measurement methods using an absorption edge wavelength shift and a transmittance variation method have been confirmed to be promising for semitransparent silicon wafers under 900 K. A hybrid surface temperature sensor for calibration has been greatly improved with the introduction of a thin film (Hastelloy metal) that is chemically etched. By combining these results, a temperature measurement system for finally mitigating background radiation noise at a real manufacturing process of silicon wafers will be developed.

两种辐射测温方法，即利用偏振辐射比同时测量发射率和温度的方法和利用发射率不变条件同时测量发射率和温度的方法已被成功地发展起来。这些方法适用于0.01 ~ 2000 cm的不同电阻率、0.9 ~ 4.5 μ m的宽光谱和900 K以上的温度范围。此外，利用吸收边波长漂移和透射率变化法的两种非接触式温度测量方法已被证实在900 K以下的半透明硅晶片上是有前途的。用于校准的混合式表面温度传感器已经通过引入化学蚀刻的薄膜（哈氏合金金属）而得到了极大的改进。通过组合这些结果，将开发用于最终减轻硅晶片的真实的制造过程中的背景辐射噪声的温度测量系统。

项目成果

Uncertainty in the temperature of silicon wafers measured by radiation thermometry based upon a polarization technique

基于偏振技术的辐射测温法测量硅片温度的不确定度

• 发表时间: 2009
• 作者: 井内徹;後上敦史
• 通讯作者: 後上敦史

A hybrid-type surface temperature sensor and its application to the development of emissivity compensated radiation thermometry

一种混合型表面温度传感器及其在发射率补偿辐射测温中的应用

• 发表时间: 2008
• 作者: 後上敦史;井内徹
• 通讯作者: 井内徹

A non-contact temperature measurement of semitransparent silicon wafers with absorption edge wavelength

吸收边波长非接触式半透明硅片温度测量

• 发表时间: 2008
• 作者: T.Iuchi;R. Shinagawa
• 通讯作者: R. Shinagawa

Uncertainty of a hybrid surface temperature sensor for silicon thermocouple

硅热电偶混合表面温度传感器的不确定度

• 发表时间: 2009
• 期刊: Review of Scientific Instruments Vol.80, No.12
• 作者: T.Iuchi;A.Gogami
• 通讯作者: A.Gogami

偏光放射率不変条件を利用したシリコンウエハの放射測温法

利用偏振发射率不变条件的硅片辐射测温方法

• 发表时间: 2009
• 作者: 岩崎友幸;角谷聡;井内徹
• 通讯作者: 井内徹