In-situ radiation thermometry of semiconductor materials and its calibration system

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Two radiation thermometry, namely, the simultaneous measurement of emissivity and temperature by use of the ratio of polarized radiances and the method due to an emissivity-invariant condition have successfully been developed. These methods are available irrespective of different resistivity from 0.01 to 2000cm, wide spectra from 0.9 to 4.5 micrometers and temperature range over 900 K. Moreover, the two non-contact temperature measurement methods using an absorption edge wavelength shift and a transmittance variation method have been confirmed to be promising for semitransparent silicon wafers under 900 K. A hybrid surface temperature sensor for calibration has been greatly improved with the introduction of a thin film (Hastelloy metal) that is chemically etched. By combining these results, a temperature measurement system for finally mitigating background radiation noise at a real manufacturing process of silicon wafers will be developed.