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Study on the method for the measurements of both emissivity and temperature of semiconductor materials.

半导体材料发射率和温度同时测量方法的研究。

基本信息

批准号：
15560364
负责人：
IUCHI Tohru
金额：
$ 2.05万
依托单位：
Toyo University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

项目摘要

This research includes the feasibility study on the development of a hybrid type surface thermometer and the availability of emissivity-invariant condition. The research results are summarized as follows.1.The accuracy of a hybrid-type surface thermometer that has been manufactured by way of trial is -5 K in systematic errors and ±1 K in random errors near 700 K. A hybrid-type surface thermometer comprised of a fiber rod that can measure a small area (1 mmΦ)) in vacuum also has been manufactured.2.The emissivity-invariant condition that is valid near room temperature for silicon wafers is not necessarily available at high temperature. The investigation on the phenomenon should be carried out from now.3.New radiation thermometry for semitransparent silicon wafers with the oxide film (SiO_2) near room temperature has been proposed using Brewster angle at 55.2° and p-polarized radiance at a wavelength of 4.7 μm. In this method, two blackbodies are introduced in the measurement system ; the one is used for reflectivity measurement of wafers and the other is used for providing constant radiance that comes through the rear side of the semitransparent wafer. The emissivity of the specimen is calculated by the reflectivity and transmissivity, thus the temperature of the sample can be obtained.4.By using the simulation model for estimating the optical properties of silicon wafers, a one-to-one relation between a ratio of p- and s-polarized radiances and an emissivity at some specific conditions was found out, which was experimentally confirmed at higher temperature over 900 K where the silicon wafer became opaque. Based on these results, new radiation thermometry that can measure the temperature and spectral emissivity of silicon wafers at a wavelength of 0.9 μm and at moderately high temperature irrespective of the emissivity change due to the oxide film thickness was proposed

这项研究包括开发混合型表面温度计的可行性研究和发射率不变条件的可用性。主要研究成果如下：1.研制的混合型表面温度计的系统误差为-5K，随机误差为±1K，测量精度接近700K。此外，还研制了由可在真空中测量小面积(1 mmΦ)的光纤棒组成的混合型表面温度计。2.在高温下，硅片在室温附近适用的发射率不变条件不一定适用。提出了一种对氧化膜(SiO_2)接近室温的半透明硅片进行辐射测温的新方法，该方法的布儒斯特角为55.2°，p偏振辐射强度为4.7μm。该方法在测量系统中引入了两个黑体，一个用于测量硅片的反射率，另一个用于提供通过半透明硅片背面的恒定辐射。由反射率和透射率计算出样品的发射率，从而得到样品的温度。4.利用估算硅片光学性质的模拟模型，找到了特定条件下p偏振和S偏振辐射的比值与发射率之间的一一对应关系，并在900K以上的高温下得到了实验证实。基于这些结果，提出了一种新的辐射测温法，它可以测量硅片在0.9μm波长和中等高温下的温度和光谱发射率，而不考虑由于氧化膜厚度而引起的发射率的变化