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MODELING OF EMISSIVITIES OF METALS AND SEMICONDUCTORS

金属和半导体发射率的建模

基本信息

批准号：
10650416
负责人：
IUCHI Tohru
金额：
$ 1.86万
依托单位：
TOYO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650416/
关键词：
EMISSIVITY POLARIZATION OPTICAL CONSTANT THIN FILM OXIDE FILM SURFACE ROUGHNESS SCATTERING ABSORPTION 干渉酸化温度

项目摘要

Modeling of directional polarized spectral emissivities of metals and semiconductors such as steel sheets and Si wafers during the growth of oxide film on their surfaces has been achieved. In this model, a concept of an effective optical constant is introduced, which includes the effect of some parameters such as surface roughness and inhomogeneous film and so on. The concluding remarks are as follows,Spectral emissivities of commercial metals correspond mostly to Hagen-Rubens equation at wavelengths of more than 5 μm. With decreasing wavelength, the difference between a measured emissivity and one based on the equation becomes large. The emissivity change caused by oxide film grown on a specimen is treated as the interaction of radiation between the oxide film to be a dielectric and the surface of the specimen to be a conductive.An idealistic model under the above condition explains most of the phenomena concerning to directional polarized properties of spectral emissivities except the emissivity oscillation with the film thickness. Real emissivities oscillate and converge finally to a constant value with increasing film thickness, while the model shows a periodical change of emissivities with increasing film thickness. This means an oxide film of a metal has a complex optical constant.A practical model which uses an effective optical constant has been developed by introducing a concept of EMT (Effective Medium Theory) model which replaces surface roughness or an inhomogeneous film of a real specimen to an equivalent homogeneous film. An ellipsometric method is used to measure an effective optical constant.The remaining problems are to investigate the limitation of effective optical constants and also to apply this practical model used for metals to semiconductor wafers.

本文建立了金属和半导体材料（如钢板和硅片）表面氧化膜生长过程中的定向偏振光谱发射率模型。该模型引入了有效光学常数的概念，考虑了表面粗糙度、薄膜不均匀性等参数的影响，得出结论：在5 μm以上波长处，工业金属的光谱发射率基本符合Hagen-Rubens方程。随着波长的减小，测量的发射率与基于该方程的发射率之间的差异变大。将试样表面氧化膜引起的发射率变化看作是氧化膜作为电介质与试样表面作为导电介质之间的辐射相互作用，在此条件下建立的理想模型解释了除发射率随膜厚振荡外的大多数与光谱发射率方向偏振特性有关的现象。真实的发射率随膜厚的增加而振荡并最终收敛到一个定值，而模型的发射率随膜厚的增加呈现周期性变化。通过引入EMT（Effective Medium Theory）模型的概念，将真实的样品的表面粗糙度或非均匀膜层等效为均匀膜层，建立了一个使用有效光学常数的实用模型。用椭圆偏振法测量有效光学常数，剩下的问题是研究有效光学常数的局限性，并将这种用于金属的实用模型应用到半导体晶片上。