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Research on a method of temperature measurement for a silicon semiconductor wafer

硅半导体晶片温度测量方法的研究

基本信息

批准号：
13650468
负责人：
IUCHI Tohru
金额：
$ 1.79万
依托单位：
Toyo University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

项目摘要

Following results have been achieved during the past two years from 2001 to 2002.(1) Experimental apparatuses for emissivity measurements of silicon wafers near room temperature and at high temperature over 1000 K have been developed. Using these apparatuses, spectral, directional and polarized emissivities can be measured.(2) By revamping a commercially available equipment for thin film measurement, a measurement apparatus for optical constants and thin thickness of a silicon wafer at high temperature (〜1100 K) and at wavelength from 400 to 1100 nm has been developed.(3) The conception of a hybrid type surface thermometer that utilizes both advantages of contact and non-contact techniques to a measured object has been obtained .this idea is promising for monitoring the surface temperature of a silicon wafer, welding on a thermocouple on which is very difficult. This hybrid surface thermometer for practical use is now under development.(4) Emissivity modeling for silicon wafer has completed. Using this modeling, emissivity behaviors under a lot of conditions can be simulated. The emissivity-invariant condition has been found through the simulation. Emissivity of a silicon wafer is unchanged under some conditions irrespective of changes of oxide film thickness. Experimental confirmation is necessary for this finding.Part of these results have been submitted to journals such as Applied Optics and Trans. of SICE and successfully accepted. 16 papers have been published at international and domestic workshops and conferences.The hybrid surface thermometer and the emissivity-invariant condition are soon intended to apply for patents because these are original and useful.

在2001年至2002年的两年中，取得了以下成果。(1)研制了一套用于测量硅晶片室温附近和1000 K以上高温下发射率的实验装置。使用这些设备，光谱，定向和偏振发射率可以测量。(2)通过改进用于薄膜测量的市售设备，已经开发了用于在高温（~ 1100 K）和波长从400至1100 nm下测量硅晶片的光学常数和薄厚度的测量装置。(3)提出了混合型表面温度计的概念，该温度计充分利用了被测物体接触和非接触技术的优点，这一想法对于监测难以焊接热电偶的硅片表面温度很有前途。这种实用的混合表面温度计目前正在开发中。(4)完成了硅晶片的ESTO建模。利用该模型，可以模拟多种条件下的发射率行为。通过模拟计算，找到了发射率不变的条件。硅晶片的腐蚀在某些条件下不受氧化膜厚度变化的影响。这一发现需要实验的证实，部分结果已提交给《应用光学》、《SICE学报》等期刊，并被成功接受。在国际、国内研讨会和会议上发表论文16篇，混合表面温度计和发射率不变条件，因其新颖实用，即将申请专利。