Research on a method of temperature measurement for a silicon semiconductor wafer

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Following results have been achieved during the past two years from 2001 to 2002.(1) Experimental apparatuses for emissivity measurements of silicon wafers near room temperature and at high temperature over 1000 K have been developed. Using these apparatuses, spectral, directional and polarized emissivities can be measured.(2) By revamping a commercially available equipment for thin film measurement, a measurement apparatus for optical constants and thin thickness of a silicon wafer at high temperature (〜1100 K) and at wavelength from 400 to 1100 nm has been developed.(3) The conception of a hybrid type surface thermometer that utilizes both advantages of contact and non-contact techniques to a measured object has been obtained .this idea is promising for monitoring the surface temperature of a silicon wafer, welding on a thermocouple on which is very difficult. This hybrid surface thermometer for practical use is now under development.(4) Emissivity modeling for silicon wafer has completed. Using this modeling, emissivity behaviors under a lot of conditions can be simulated. The emissivity-invariant condition has been found through the simulation. Emissivity of a silicon wafer is unchanged under some conditions irrespective of changes of oxide film thickness. Experimental confirmation is necessary for this finding.Part of these results have been submitted to journals such as Applied Optics and Trans. of SICE and successfully accepted. 16 papers have been published at international and domestic workshops and conferences.The hybrid surface thermometer and the emissivity-invariant condition are soon intended to apply for patents because these are original and useful.