ＩＩＩ－Ｖ　ＣＭＯＳフォトニクスを用いた光電子集積回路に関する研究

我们在III-V CMOS光子学平台上演示了带InGaAs驱动MOSFET的单片集成InGaAsP光调制器，解决了上述问题。首先，研究了预键合退火对III-VOI晶圆的影响。采用预键合退火工艺，成功抑制了孔隙的产生。在600℃退火后，孔隙密度从106降低到103。其次，通过Zn扩散和Ni-InGaAsP合金结形成低阻横向P-I-N结。与Be离子注入法相比，Zn扩散法大大降低了p+区的片电阻和接触电阻。此外，Ni-InGaAsP合金首次被证明可以取代Si离子注入。Ni-InGaAsP合金能够在350°C以下的低温下制造低电阻n+结。虽然总工艺温度被抑制到500℃。利用这些结果，我们展示了利用光吸收的InGaAsP光调制器。InGaAsP调制器在注入电流为40mA/mm时的衰减几乎为-40dB/mm，几乎是Si调制器的2倍。最后，我们首次展示了单片集成InGaAsP非对称Mach-Zehnder干涉仪（MZI）调制器和InGaAs驱动MOSFET。InGaAsP调制器在注入电流后显示出自由频谱范围（FSR）的移位，其移位大约需要2.2 mA。当调制器通过InGaAs驱动MOSFET工作时，我们通过栅极偏置变化获得了InGaAsP调制器的相移。

we demonstrated the monolithically integrated InGaAsP optical modulator with InGaAs driver MOSFET on III-V CMOS photonics platform with solving above problems.Firstly, the effect of pre-bonding annealing on III-VOI wafer was investigated. By applying pre-bonding annealing process, we successfully suppressed void generation. The void density was highly reduced from 106 to 103 after post annealing process at 600°C. Secondly, low resistive lateral P-I-N junction was formed by Zn diffusion and Ni-InGaAsP alloy junction. By Zn diffusion method, the sheet and contact resistance of p+ region was highly reduced compare to Be ion implantation method. Moreover, the Ni-InGaAsP alloy was firstly demonstrated to replace Si ion implantation. The Ni-InGaAsP alloy enable to make a low resistive n+ junction with low temperature under 350°C. Although the total process temperature was suppressed to 500°C. Using these result, we demonstrated the InGaAsP optical modulator using optical absorption. The InGaAsP modulator shows almost -40dB/mm attenuation at 40mA/mm current injection which is almost 2 times larger than Si modulator.Finally, we firstly demonstrated monolithically integrated InGaAsP asymmetric Mach-Zehnder interferometer (MZI) modulator and InGaAs driver MOSFET. The InGaAsP modulator shows shift of free-spectrum range (FSR) by current injection and it needs almost 2.2 mA for phi shift. While modulator operation via InGaAs driver MOSFET, we obtained the phase shift of InGaAsP modulator by gate bias change.