Single Molecule Process by Core Electron Excitations and Application to New material Creation

作为同步加速器辐射刺激过程的原位观察技术，利用埋藏金属层基底（ BML-IRRAS ）和扫描隧道电子显微镜（ STM ）技术已经开发出来，并应用于原子和分子级特征化的表面反应的红外反射吸收光谱。Furthermore，作为一种支持实验装置，用于调查同步加速器辐射刺激过程的能量依赖性、高通量单氯剂-多反射镜单氯剂-和电子离子协同技术正在开发中。BML-IRRAS具有高灵敏度和覆盖宽频率范围的特征，包括指纹区域。氢化学沉积硅（ 100 ）表面振动的3x 1和1x 1结构由BML-IRRAS调查。这是第一次明显观察到SiH-D22-D2弯曲剪刀模式在902和913的两个不同峰值之间的斑点 ... More D1-1 D1， which are assigned to isolated dihydride （ ID ） and adjacent dihydride （AD ） species， respectively。从该特性的退火温度依赖性来看，还发现了2107年和2091年的两个对称性拉伸峰值，据报道，以前已将其分配给AD和ID的振动模式，尊重。Si的表面形态学（ 111 ）研究了使用扫描隧道显微镜后的表面SiO-D22-D2，通过synchrotron Radiation Illumination。表面显示原子平坦硅（ 111 ）的较大区域-7x7结构，并由单个屏障步骤的形成特征化，被巧妙地注册成未知的晶体结构。这是一个清晰对比Si （ 111 ）表面之后的热下降，在温度880℃和以上，表面步骤的地方更不正常。The registration of the surface steps to the underlying crystal structure indicates that the Si （111 ） surface reaches thermodynamic equilibrium under synchrotron radiation at temperatures much lower than that necessary for thermal desortion。Less（低）

As an in-situ observation technique of synchrotron radiation stimulated processes, infrared reflection absorption spectroscopy using buried metal layer substrate ( BML-IRRAS ), and scanning tunneling electron microscopy ( STM ) techniques were developed, and applied to the atom and molecular level characterization of the surface reaction was investigated. Furthermore, as an supporting experimental apparatus to investigate the excitation energy dependence of the synchrotron radiation stimulated process, high flux monochromator-multilayered mirror monochromator- and electron ion coincidence technique were developed.1. BML-IRRAS has characteristics of high sensitivity and covering wide frequency range including finger print regions. The surface vibrations of hydrogen chemisorbed Si ( 100 ) surface with 3 x 1 and 1 x 1 structures are investigated by BML-IRRAS. It is clearly observed for the first time that SiHィイD22ィエD2 bend scissors mode splits to two distinct peaks locating at 902 and 913 … More cmィイD1-1ィエD1, which are assigned to isolated dihydride ( ID ) and adjacent dihydride (AD ) species, respectively. From the annealing temperature dependence of the spectra, it is also found that two symmetric stretching peaks of 2107 and 2091 cmィイD1-1ィエD1 reported previously are assigned to the vibrational modes of AD and ID, respectively.2. The surface morphology of Si ( 111 ) was investigated using scanning tunneling microscopy after desorption of surface SiOィイD22ィエD2, by synchrotron radiation illumination. The surface shows large regions of atomically flat Si ( 111 )-7x7 structure, and is characterized by the formation of single bilayer steps nicely registered to the underlying crystal structure. This is in sharp contrast to Si ( 111 ) surfaces after thermal desorption of SiOィイD22ィエD2 at temperatures 880℃ and above, where the surface steps are much more irregular. The registration of the surface steps to the underlying crystal structure indicates that the Si (111 ) surface reaches thermodynamic equilibrium under synchrotron radiation irradiation at temperatures much lower than that necessary for thermal desorption. Less