Study of basic technology for System-on-Glass

我们已经推测，占主导地位的起源小晶粒的常规准分子激光退火。(ELA)Si薄膜的生长过程是晶粒的碰撞，晶粒同时开始在Si薄膜上均匀生长。我们发展了一种新的ELA方法，称为“梯度法”，可以通过解决上述碰撞问题来生长大晶粒。此外，。我们提出了一种改进的方法--相位调制ELA法，利用激光的干涉效应，很好地控制了光强分布。生长的颗粒是常规颗粒的100倍，重复性显著提高。实验研究了晶粒尺寸与光强分布、平均光强、样品温度、表面钝化层等的关系，并对掩模设计方法、大晶粒生长的光学系统条件和投影法进行了研究。另一个横向生长 ...更多信息 已经发明了这种技术，其中均匀的准分子激光照射在光吸收层上形成的Si盘样品。大晶粒可以通过从Si盘外部的光吸收层的热的横向扩散来生长。我们可以在预定位置处生长大晶粒的事实意味着我们可以在预定位置处制造晶界。基于这一事实，我们提出了一种新的薄膜晶体管结构，其中只有一个晶界是在沟道的中心运行。由于高场漏极区域存在于结晶性良好的单个晶粒中，因此预期泄漏低。由于载流子仅穿过在晶界处形成的势垒中的一个势垒，因此场效应迁移率预期较高。沟道中心处的晶界通过复合可以有效地杀死空穴，从而产生少量的扭结效应。因此，预期这些器械具有上级性能。我们用PMELA方法制作了这种器件，并验证了它们的上级性能。少

We have speculated that dominant origin of small grains for the conventional excimer-laser annealing. (ELA) of Si thin-films is of collision of grain that start growing uniformly over the Si thin-films at the same time. We have developed a novel ELA method named as "Gradient method" that can grow large grains by solving an above-mentioned collision problem. Furthermore,. we have developed an improved method named "Phase-Modulated ELA method", to control well the light intensity distribution, by using interference effects of laser light. Grown grains was 100 times as large as the conventional ones, and repeatability was improved dramatically. And relations have been examined experimentally between grain size and light intensity distribution, average light intensity, sample temperature, surface passivation layer and so on. Mask design methodology, conditions of optical system for large grain growth and practical method using projection concepts are also investigated. Another lateral grow … More th technology has been invented where uniform excimer-laser light irradiates the sample of Si disk formed on the light absorption layer. Large grains can be grown by lateral diffusion of heat from the light absorption layer outside the Si disk.The fact that we can grow large grains at the pre-designed position means that we can make grain boundary at the pre-designed position. Based on this fact we have proposed a novel thin-film transistor structure where only one grain boundary is running at the center of the channel. Since the high field drain region exists in a single grain of good crystallinity, leakage is expected low. Since carriers cross only one the potential barrier formed at grain boundary, the field effect mobility is expected high. Grain boundary at the center of the channel can effectively kill holes by recombination, which results in a few kink effects. As a results superior performances are expected in these devices. We have fabricated this device by using PMELA method, and verified their superior performance. Less