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Preparation and Characterization of Si-based Manmade Crystals

硅基人造晶体的制备及表征

基本信息

批准号：
07405001
负责人：
MATSUMURA Masakiyo
金额：
$ 17.92万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1997
项目状态：
已结题

项目摘要

Growth characteristics have been investigated in detail for atomic-layr epitaxy (ALE) of Si on the (111) surface by using SiH2Cl2 and atomic H.Gas-phase-generation of SiHCl radials by collision plays a very important role for an ideal one monolayr per cycle growth rate, and there are proper gas pressure and residence time for dense generation of SiHCl radials. For (100) surface, atomic H can etch the SiCl molecule chemisorbed on the surface, and this hydrogen pressure should be kept low. Based on these results, a wide ALE temperature window has been achieved for both (100) and (111) surfaces.Ge-ALE has been achieved by using GeH2(CH3)2 and H for the (100) and (111) surfaces. The ALE temperature window for the (111) surface was as narrow as 20oC while it was as wide as 100oC for the (100) surface. Origin of this narrow window was attributed to the Modified Ealy-Redeal mechanism for the atomic H induced subtraction of methyl groups from the Ge-methyl dond.Monolayr adsorption of Si has been achieved on the Ge surface by using SiH4 gas. Digital growth with an ideal one-monolayr step was achieved by successive Si-ALE on the Ge surfase adsorbed by Si. Interface abruptness has been evaluated by AES and SIMS and it was confirmed that the transition layr was as thin as 1nm , Since this value was the same to the transition layr thickness of atomically abrupt Si-SiO2 system , we have concluded that the Si/Ge hetero interface was atomically abrupt.Mono-layr adsorption of Ge on Si(100) surface was achieved by 15 cycles exposure of GeCl4 and H.Digital deposition of Ge was achieved on this surface by using Ge-ALE.Combining these four elemental techniques, we have fabricated Si7Ge3 manmade crystals and confirmed the layred structure of Si and Ge.

利用SiH2Cl2和原子H对Si在(111)表面上的原子层外延(ALE)的生长特性进行了详细研究。通过碰撞气相生成SiHCl辐射对于理想的单层单层生长速率起着非常重要的作用，并且有适当的气体压力和停留时间来密集生成SiHCl辐射。对于（100）表面，原子H可以蚀刻化学吸附在表面上的SiCl分子，并且该氢压力应保持较低。基于这些结果，(100) 和(111) 表面都实现了较宽的ALE 温度窗口。Ge-ALE 是通过在(100) 和(111) 表面使用GeH2(CH3)2 和H 来实现的。 (111) 表面的 ALE 温度窗口窄至 20oC，而 (100) 表面的 ALE 温度窗口宽至 100oC。这个窄窗口的起源归因于改进的Ealy-Redeal机制，用于原子H诱导从Ge-甲基dond中减去甲基基团。通过使用SiH4气体，在Ge表面实现了Si的单层吸附。通过在 Si 吸附的 Ge 表面上连续进行 Si-ALE，实现了理想的单层步骤的数字生长。通过AES和SIMS对界面突变性进行了评估，证实过渡层厚度为1nm，由于该值与原子突变的Si-SiO2体系的过渡层厚度相同，因此我们得出Si/Ge异质界面是原子突变的结论。通过GeCl4和GeCl4和Si(100)表面的15次循环暴露，实现了Ge在Si(100)表面的单层吸附。 H.利用Ge-ALE在该表面实现了Ge的数字沉积。结合这四种元素技术，我们制备了Si7Ge3人造晶体，并证实了Si和Ge的层状结构。