Atomic-Layr-Epitaxy of Group VI Semiconductors Using Ultra-Activ Gas

使用超活性气体进行 VI 族半导体的原子层外延

• 批准号: 04452171
• 负责人: MATSUMURA Masakiyo
• 金额: $ 4.42万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452171/
• 关键词: Atomic Layr Epitaxy; Silicon; Atomic Hydrogen; Hetero Epitaxy; Germanium; ジクロロシラン; ジエチルゲルマン

Atomic Layr Epitaxy (ALE) of group VI semiconductors has studied using atomic hydrogen, which does not exist in nature. This atomic hydrogen has been generated by Catalithic effects of hot tungsten filament. By alternative exposure of atomic hydrogen and dichrolo-silane (SiH2CI2), nearly ideal growth rate of 1 monolayr per cycle has been achieved at temperatures around 600C.This ALE cycle has been applied to Ge substrate to evaluate a compositional change at the interface between the epitaxial layr, by using AES and XPS.It was found that Si film is grown in layr-by-layr manner from the first cycle, but that the surface is always covered by Ge monolayr having low surface energy.It was confirmed also that ALE of Ge is possible by changes source to GeH2(C2H5) 2 although the ideal growth rate can not be obtained. This seems to be caused by residing hydrogen atoms at the surface due to low ALE temperature of about 300C.Thus we have changed the source gas to GeH2(CH3) 2 and succeeded to obtain the ideal monolayr growth rate at about 500C.We have also tried the hetero ALE of Ge on Si, but found that there are a lot of C atoms at the surface but a few Ge. Thus we concluded that novel technology should be invented for the first hetero-ALE layr of Ge.

VI族半导体的原子层外延（ALE）已经使用自然界中不存在的原子氢进行了研究。这种氢原子是由热钨丝的催化效应产生的。采用原子氢和二氯硅烷（SiH_2Cl_2）交替暴露的方法，在600 ℃左右获得了接近理想的每周期1个单层的生长速率。将这种ALE循环应用于Ge衬底，用AES和XPS研究了外延层界面处的成分变化，发现Si膜从第一个循环开始以逐层的方式生长，但表面总是被低表面能的Ge单层所覆盖，也证实了通过改变源GeH_2（C_2H_5）_2来实现Ge的ALE是可能的，尽管不能获得理想的生长速率。这可能是由于ALE温度较低（约300 ℃）导致氢原子滞留在表面所致，因此我们将源气体改为GeH_2（CH_3）_2，并成功地在约500 ℃获得了理想的单层生长速率。因此，我们得出结论，新的技术应该发明的第一个异质ALE层的Ge。

项目成果

今井茂他: "Atomic Layer Epitaxy of Germanium using Atomic Hydrogen" Abstracts of Electronic Material Conf.52 (1993)

Shigeru Imai 等人：“使用原子氢进行锗的原子层外延”电子材料会议摘要 52 (1993)

S.Imai: "Atomic Layr Epitaxy of Silicon by Gas Confinement Method" Proc. IUMRS-ICAM-93. (in Press). (1994)

S.Imai：“气体限制法硅原子层外延”Proc。

S.Imai: "Atomic Layer Epitaxy of Si Using Atomic H" Thin Solid Films. 223. (1993)

S.Imai：“使用原子 H 进行硅原子层外延”固体薄膜。

今井茂 他: "Atomic Layer Epitaxy of Si Using Atomic H" Thin Solid Films. 225. 168-172 (1993)

Shigeru Imai 等人：“使用原子 H 进行硅的原子层外延”薄固体薄膜。225. 168-172 (1993)

菅原聡 他: "Electronic Structures of S-Based Manmade Crystals" Japan Journal of Applied Physics. 32. 384-388 (1993)

Satoshi Sukawara 等人：“S 基人造晶体的电子结构”日本应用物理学杂志 32. 384-388 (1993)