Building up quantum electronics with tailored semiconductor nanostructures

该项目旨在开发纳米级砷化铟/锑化镓（InAs/GaSb）器件，使用三维模板半导体生长方法“自下而上”生产。这种材料有一对电子和空穴层，它们之间的距离只有几个纳米，这提供了对物质状态的访问，如激子凝聚体和拓扑绝缘体，它们在量子信息技术中有潜在的用途。该项目将使用模板生长来创建InAs/GaSb界面垂直于器件平面的器件。该项目在纳米器件的增长、设计和生产方面的工作将为澳大利亚转型经济体在纳米技术、量子技术和节能器件等关键领域提供竞争优势和灵活性。

This project aims to develop nanoscale indium arsenide/ gallium antimonide (InAs/GaSb) devices produced ‘from the bottom up’ using three-dimensional templated semiconductor growth methods. This material has a pair of electron and hole layers separated by a few nanometres, which provide access to states of matter such as exciton condensates and topological insulators with potential use in quantum information technologies. The project will use templates growth to create devices where the InAs/GaSb interface sits perpendicular to the device plane. This project’s work on growth, design and production of nanoscale devices will give Australia’s transitioning economy competitive advantage and agility in critical sectors of nanotechnology, quantum technologies and energy efficient devices.