High-Power Tunable GaAs Distributed Feedback Lasers

光子学是一项具有广泛应用的关键技术。在这个项目中，我们将实现新一代增强功能的GaAs基激光器，波长范围为300至1300 nm。这些器件基于新的单片集成方案，将影响显示器、印刷、吸收光谱和电信领域的现有应用，同时实现天体光子学、传感、生物医学成像、光动力学治疗、荧光光谱、美容和临床手术程序、过程控制、农业、国防和安全领域的新应用。由于需要在含铝层上过度生长，在GaAs上的单片集成以前受到阻碍。我们将利用研究人员以前的EPSRC可行性研究中所展示的方法，研究先进的分立GaAs元件，以研究真正的单片集成的潜力。我们将实现一个分布反馈（DFB）激光器单片集成在一个连续的掩埋波导内的功率放大器。作为灵活性的额外证明，DFB附近将有一个加热器元件，用于波长稳定和调谐。这项颠覆性的新技术将实现低成本、高效率、高功率、波长灵活的激光器，范围从600到1300 nm。此外，固有的高功率和光谱纯度有利于倍频，以将范围扩展到300 nm。该项目的具体目标将是这些集成器件的概念验证演示，并以760 nm（基于量子威尔斯）和1180 nm（基于量子点）的可靠性统计数据为后盾，即覆盖该技术中可用的短波长和长波长区域。

Photonics is a key enabling technology with far reaching applications. In this project we will realise a new generation of enhanced-functionality GaAs-based lasers for the 300 to 1300nm wavelength range. These devices, based on a new monolithic integration scheme, will impact upon existing applications in display, printing, absorption spectroscopy and telecoms, whilst enabling new applications in astrophotonics, sensing, biomedical imaging, photodynamic therapy, fluorescence spectroscopy, cosmetic and clinical surgery procedures, process control, agriculture, defence and security. Monolithic integration on GaAs has previously been impeded due to the requirement for overgrowth upon aluminium containing layers. We will capitalise on approaches demonstrated in the investigator's previous EPSRC feasibility study into advanced discrete GaAs components to investigate the potential for true monolithic integration. We will realise a distributed feedback (DFB) laser monolithically integrated with a power amplifier within a continuous buried waveguide. As an extra proof of flexibility, there will be a heater element adjacent to the DFB for both wavelength stabilisation and tuning. This disruptive new technology will enable low cost, highly efficient, high power, wavelength agile lasers, in the range from 600 to 1300nm. Additionally, inherent high power and spectral purity are favourable for frequency doubling to extend the range down to 300nm. Specific objectives of this project will be a proof of concept demonstration of these integrated devices, backed up with reliability statistics at 760nm (based on quantum wells) and 1180nm (based on quantum dots), i.e. covering the short and long wavelength regions readily available in this technology.