High Current Module and Technologies Optimised for HVDC
High Current Module and Technologies Optimised for HVDC
批准号:
EP/L021579/1
负责人:
Patrick Palmer
金额:
$129.56万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2014
资助国家:
英国
项目状态:
已结题
起止时间:
2014 至 --
中文摘要
提出的研究将探讨先进的功率半导体模块设计在提高电压源和高压直流变流器的效率和增加容量方面所起的作用。高压直流输电越来越多地用于可再生能源和跨国输电的整合,推动了高压直流技术的发展。在欧洲,目前正在规划和建设的高压直流输电方案超过20个,其中大多数将采用新的基于IGBT的电压源转换器(VSC)技术。新型多级变换器的发展大大提高了变频器的直流工作电压,改善了变频器的性能。尽管取得了这些重大进展,但仍有强大的动力来提高产能和效率。迄今为止,多级高压直流输电通常利用最初为其他应用设计的高压功率半导体模块。按照预计的部署速度,VSC-HVDC很可能成为高压电力的关键市场之一。这个潜在市场的规模证明了开发一种新的功率半导体开关是合理的,这种开关是专门针对多级VSC转换器的需求而设计的。这种电源开关将由高容量多器件模块和相关的智能栅极驱动器组成,可以优化多级VSC系统中的模块性能。有人提出,这种技术可以提供显着的增益在转换器容量和效率在降低成本。
英文摘要
The proposed research will investigate the role that advanced power semiconductor module design can play in improving the efficiency and increasing the capacity of Voltage Source, HVDC converters. Growing use of HVDC for integration of renewable energy sources and transnational electricity transmission is driving development HVDC technologies. Within Europe there are over 20 HVDC schemes currently planned and under construction most of which will employ new IGBT based Voltage Source Converter (VSC) technology. The development of new multi-level converters greatly raised DC operating voltages in VSC converters and improved their performance.Despite these significant advances, there are still strong drivers to raise both capacity and efficiency. To date multi-level HVDC typically utilises high voltage power semiconductor modules originally designed for other applications. At projected deployment rates, VSC-HVDC is likely to become one of the key markets for high voltage power. The size of this potential market justifies the development of a new power semiconductor switch, specifically designed around the needs of multi-level VSC converters. Such a power switch will be a composite of high capacity multi-device module and an associated intelligent gate drive which can optimise module performance in multi-level VSC systems. It is proposed that such techniques can provide significant gains in both converter capacities and efficiency at a reduced cost.
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Characterization of Voltage Divergence in Series Connected SiC Trench MOSFETs and Si IGBTs
串联 SiC 沟槽 MOSFET 和 Si IGBT 中电压发散的表征
DOI:
--
发表时间:
2018
期刊:
影响因子:
--
作者:
[Davletzhanova Z]
通讯作者:
Davletzhanova Z
DOI:
10.23919/ipec.2018.8507853
发表时间:
2018
期刊:
影响因子:
--
作者:
[Davletzhanova Z]
通讯作者:
Davletzhanova Z
A Temperature Gradient-Based Potential Defects Identification Method for IGBT Module
一种基于温度梯度的IGBT模块潜在缺陷识别方法
DOI:
10.1109/tpel.2016.2565701
发表时间:
2017-03
期刊:
IEEE Transactions on Power Electronics
影响因子:
6.7
作者:
[Li Ran, Irfan Ullah, Shengyou Xu, Philip Mawby]
通讯作者:
Philip Mawby
Impact of the Gate Oxide Reliability of SiC MOSFETs on the Junction Temperature Estimation Using Temperature Sensitive Electrical Parameters
SiC MOSFET 栅极氧化层可靠性对使用温度敏感电气参数估算结温的影响
DOI:
10.1109/ecce.2018.8557810
发表时间:
2018
期刊:
影响因子:
--
作者:
[Gonzalez J]
通讯作者:
Gonzalez J
Safe-Operating-Area of Snubberless Series Connected Silicon and SiC power devices
无缓冲器串联硅和 SiC 功率器件的安全工作区
DOI:
10.1109/ecce.2018.8557402
发表时间:
2018
期刊:
影响因子:
--
作者:
[Davletzhanova Z]
通讯作者:
Davletzhanova Z
共 9 条
An Undergraduate Radio Science Laboratory
-
批准号:9351533
-
项目类别:Standard Grant
-
资助金额:$3.35万
-
财政年份:1993
-
负责人:Patrick Palmer
-
依托单位:
Studies of Radio Frequency Spectral Lines From TheinterstellAr Medium (With Supporting Continuum Andoptical Studies)
-
批准号:7305282
-
项目类别:Continuing Grant
-
资助金额:$12.38万
-
财政年份:1973
-
负责人:Patrick Palmer
-
依托单位:
Radio Frequency Emission Lines From the Interstellar Medium
-
批准号:7002027
-
项目类别:Standard Grant
-
资助金额:$0.0万
-
财政年份:1970
-
负责人:Patrick Palmer
-
依托单位:
海外基金