Integration of Novel Materials in Spintronic Devices

基于电荷的计算设备的持续扩展正在达到其极限，对于更多的摩尔(继续扩展)和更多的摩尔(功能多样化)，国际半导体路线图正在关注新材料及其在现有制造技术中的集成。二维(2D)材料，如石墨烯，表现出独特的电学、热学和机械性能，并在广泛的设备应用中显示出良好的前景，特别是自旋电子学和下一代微电子/光电子学和系统。石墨烯不仅可以支持很高的载流子迁移率和电流密度，而且具有很小的自旋轨道耦合和很大的电子相干长度。此外，由于它的原子厚度，它对隧道结器件结构非常感兴趣。随着每年售出数以亿计的计算机硬盘驱动器，磁性目前是信息存储的主要存储库。携带信息的是电子的“自旋”，也就是基本的纳米磁铁。除了存储，自旋电子学和这种新的设备架构被预见为信息处理的新范例的基础，转向低功耗、非易失性的“绿色”电子设备。这项提议旨在创建一个国际研究网络，以开发基于2D材料的新的集成电子和自旋设备概念，克服受控接口等关键实验问题，并开发集成制造技术，这将使2D材料进入半导体路线图，这是释放其商业潜力的关键。因此，该提案结合了国际合作伙伴的世界领先专业知识，特别是日本合作伙伴在开发和制造最先进的半导体器件方面的专业知识，英国合作伙伴的2D制造技术和设备材料专业知识，以及法国合作伙伴的自旋电子学专业知识。拟议的研究具有很强的行业一致性，为这些新材料和设备架构进入市场的现实路线铺平了道路。

The continued scaling of charge-based computing devices is reaching its limits and, both for more Moore (continued scaling) and more than Moore (functional diversification), the International Semiconductor Roadmap is looking at new materials and their integration in existing manufacturing technology. Two dimensional (2D) materials, such as graphene, exhibit unique electrical, thermal and mechanical properties and show promise as components for a wide range of device applications, in particular spintronics and next generation micro/optoelectronics and systems. Graphene can not only support very high carrier mobilities and current densities, but also has small spin-orbit coupling and large electron coherence length. Also, due to its atomic thickness, it is very interesting for tunnel junction device architectures. With hundreds of millions of computer hard drives sold every year, magnetism is currently the main repository of information storage. It is the electron "spin," the elementary nanomagnet, that carries the information. Beyond storage, spintronics and such new device architectures are foreseen as the foundation for a new paradigm for information processing toward low-power-consumption nonvolatile "green" electronics. This proposal aims at creating an international research network to develop new integrated electronic and spin-based device concepts based on 2D materials, to overcome key experimental problems such as controlled interfacing and to develop integrated manufacturing technology, which would allow 2D materials to enter the semiconductor roadmap, the key to unlocking their commercial potential. The proposal thereby combines the world leading expertise of the international partners, in particular on the development and manufacture of state-of-the-art semiconductor devices of the Japanese Partners, on 2D manufacturing technology and device material know-how of the UK partners and the spintronics expertise of the French partners. The proposed research has a strong industrial alignment, paving the way for realistic routes to markets for these new materials and device architectures.