Manufacturing at the 7nm node and beyond enabled by novel resist technology

现代世界依赖于诸如移动的电话和膝上型计算机和平板电脑的电子设备。这种设备的计算能力呈指数级增长，因为自20世纪50年代末以来，电子工业已经能够每两年将组件的尺寸减小两倍。在不久的将来，关键部件-场效应晶体管（FET）-将达到7 nm节点，以后它们将更小。电子工业正在引入极紫外光刻来写入这种纳米级FET。这就产生了本提案所述的多重挑战。制造FET的一个关键因素是抗蚀剂材料，在将图案转移到硅中之前，将图案写入抗蚀剂材料中。我们开发了一种新的抗蚀剂材料系列，具有出色的分辨率，并且在纵横比（即特征相对于其宽度的高度）和线边缘粗糙度方面处于世界领先地位。它们具有独特的蚀刻性能，使我们能够将薄的深结构写入硅和其他材料中。在这里，我们将利用这些独特的特性来制造将用于未来电子设备的关键结构。其中包括：掩模，通过该掩模，极端紫外线辐射将用于使用光刻写入设备;散热器，需要消散由非常高的薄FET产生的热量;改进的电子发射器，以增加电子束写入的亮度。我们将进一步设计我们的抗蚀剂，以提高灵敏度，并满足未来行业的写入速度目标，同时保持高分辨率结构。一个由化学家、物理学家、工程师和材料科学家组成的世界领先团队已经组建起来，其结果将是多项突破，从而实现7纳米节点及更高节点的制造。

The modern world is dependent on electronic devices such as mobile phones and laptop computers and tablets. The computing power of such devices has increased exponentially because the electronics industry has been able to reduce the size of components by a factor of two every two years since the late 1950s. In the near future the key components - field-effect transistors (FETs) - will be at the 7 nm node and later they will be still smaller. The electronics industry is introducing extreme UV lithography to write such nanoscale FETS. This produces multiple challenges that are addressed in this proposal. A key factor in manufacturing FETs is the resist material into which the pattern is written before it is transferred into silicon. We have developed a new family of resist materials which give excellent resolution, and that are world leading in their aspect ratios (i.e. how high a feature can be against its width) and line edge roughness. They have unique etch performance which enables us to write thin deep structures into silicon and into other materials. Here we will exploit the unique characteristics to make key structures that will be used in future electronic devices. These include: masks through which extreme UV radiation will be used to write devices using lithography; heat sinks which are needed to dissipate heat generated by very tall thin FETs; improved electron emitters to increase the brightness of electron-beam writes. We will further engineer our resists to increase sensitivity and meet future industry targets for write speed while maintaining high resolution structures. A world leading team of chemists, physicists, engineers and material scientists has been assembled and the outcome will be multiple breakthroughs that will enable manufacturing at the 7 nm node and beyond.