A new low-complexity paradigm for analogue computation and hardware learning
A new low-complexity paradigm for analogue computation and hardware learning
批准号:
EP/V002759/1
负责人:
Radu Sporea
金额:
$142.79万
依托单位:
依托单位国家:
英国
项目类别:
Fellowship
财政年份:
2021
资助国家:
英国
项目状态:
未结题
起止时间:
2021 至 --
中文摘要
这位研究员和他的团队正在寻求开发一种名为多模晶体管的突破性电子设备。由于十多年的非传统器件设计经验,它允许全新的应用,如硬件学习、模拟计算和控制,同时具有能效和易于制造。电子设备的新闻标题通常欢呼纳米级十亿晶体管芯片的发展,但显示屏技术存在重大创新机会,其中普遍要求以低成本在大面积上制造电路,而不是最终的小型化。现有的制造设施现在部分地被重新用于新兴的大面积电子(LAE)应用:微流体、芯片实验室、无处不在的传感器或可穿戴电子设备。LAE通常包含相对简单的电路的大阵列,而晶体管很少,因为区域性能的变化阻碍了复杂电路的制造。通过工艺和设备的改进,以及使用性能优异的新材料,LAE不断取得进展,这两种方法都需要大量的资本投资。这位研究员提出了LAE发展的重要一步,一种激进的新器件设计:多模晶体管(MMT)。MMT提供了设计电子电路的新方法,用于高效的模拟运算(放大、数据转换、模拟计算)、控制和反馈,并最终实现具有学习能力的LAE电路(硬件人工智能),这在传统设备和技术中迄今是不现实的。功能是使用最小复杂性的节能电路实现的,允许以低成本进行环境友好型制造。通过极大地扩展设计可能性,同时与传统的LAE制造完全兼容,MMT电路延长了当前制造技术的使用寿命,最大化了投资回报,并可以加速采用新兴工艺,如2D半导体和空间原子层沉积。For的团队将利用我们在器件设计方面的长期经验和我们国际合作伙伴的互补能力,在最先进的数值模拟支持下,使用传统和新兴半导体系统中的真空加工和添加制造来设计、制造和测试器件和电路。该团队将利用他们广泛的合作者网络为新的电子设计范例的开发提供种子。由于这是一项使能技术,其应用范围涵盖从一次性医疗诊断和作物监测到自动车辆控制、新形式用户界面和身临其境的娱乐环境等领域,为英国和世界带来巨大的长期经济和公共利益。新功能的含义,如硬件人工智能和自主性,将不断被考虑。利益相关者将通过跨学科研讨会、在线参与和科学节参与来参与形成这项研究。对人的关注将进一步包括:延续长达十年的培训、指导和让在校学生参与研究员研究的传统;通过指导、独立和基于工作的开创性性质,支持年轻研究人员在职业生涯中有一个良好的开端;以及将研究结果纳入萨里郡的教学课程,以提高我们毕业生的就业能力。该奖学金将加速该研究员作为国际技术和思想领袖的成长,同时在全球不确定的时期保留英国的宝贵技能、知识产权和诀窍。奖学金是最佳的资助途径,允许在包括世界领先的研究设施和支持网络的强大结构和协作环境中,完全致力于推进这一开创性的设计范例。
英文摘要
The Fellow and his team are seeking to develop a ground-breaking electronic device named the multimodal transistor. Arising from more than a decade of experience in unconventional device design, it allows for entirely new applications such as hardware learning, analog computation and control, while being energy efficient and easy to fabricate.News headlines in electronic devices usually hail developments in nanoscale billion-transistor chips, yet there are major opportunities for innovation in display screen technologies, in which the requirement of fabricating circuits at low cost over large areas, and not ultimate miniaturization, is prevalent. Existing fabrication facilities are now partly being repurposed for emerging large area electronic (LAE) applications: microfluidics, lab-on-a chip, ubiquitous sensors or wearable electronics. LAE usually contain large arrays of relatively simple circuits with few transistors, as areal performance variations impede the fabrication of complex circuits. Incremental progress in LAE is constantly achieved through processes and equipment improvements, and by using new materials with superior properties, both with large capital investment. The Fellow proposes a major step in LAE development, a radical new device design: the multimodal transistor (MMT). The MMT enables new ways of designing electronic circuits for efficient analog operations (amplification, data conversion, analog computation), control and feedback, and ultimately, LAE circuits capable of learning (hardware AI), so far impractical with conventional devices and techniques. Functionality is achieved using energy-efficient circuits of minimal complexity, allowing environmentally friendly fabrication at low cost. By greatly expanding the design possibilities, while being entirely compatible with conventional LAE fabrication, MMT circuits extend the usable lifetime of current manufacturing technologies, maximising the return on investment, and can accelerate the uptake of emerging processes such as 2D semiconductors and spatial atomic layer deposition.The Fellow's team will leverage our long experience in device design and the complementary capabilities of our international partners to design, fabricate and test devices and circuits using vacuum processing and additive manufacturing in conventional and emergent semiconductor systems, supported by state-of-the-art numerical simulation. The team will use their extensive collaborator networks to seed the development of a new electronic design paradigm.As this is an enabling technology, its applications span fields from disposable medical diagnostics and crop monitoring to autonomous vehicle control, new forms user interfaces and immersive entertainment environments, with substantial long term economical and public benefits for the UK and the world. The implications of the novel functionality, such as hardware AI and autonomy, will be a constantly considered. Stakeholders will be involved in shaping the research through cross-disciplinary workshops, online engagement and science festival participation. The focus on people will further include: continuing a decade-long tradition of training, mentoring and involving school students in the Fellow's research; supporting a strong start to the careers of young researchers involved through mentoring, independence and due to the ground-breaking nature of the work; and incorporating the findings into Surrey's teaching curriculum to increase our graduates' employability. The Fellowship will accelerate the Fellow's growth as an international technical and thought leader, while retaining valuable skills, intellectual property and know-how in the UK at a time of global uncertainty. A Fellowship is the optimal funding route, allowing full commitment to advancing this trailblazing design paradigm, within a robust structure and collaborative environment which includes world-leading research facilities and support networks.
期刊论文(10)
专著(0)
科研奖励(0)
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Extraordinarily Weak Temperature Dependence of the Drain Current in Small-Molecule Schottky-Contact-Controlled Transistors through Active-Layer and Contact Interplay
通过有源层和接触相互作用,小分子肖特基接触控制晶体管中漏极电流的温度依赖性极弱
DOI:
10.1002/aelm.202201163
发表时间:
2022
期刊:
Advanced Electronic Materials
影响因子:
6.2
作者:
[Bestelink E]
通讯作者:
Bestelink E
High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors
基于同等尺寸 IGZO 和 DNTT 源栅晶体管的高增益互补逆变器
DOI:
10.1039/d3tc02474a
发表时间:
2023
期刊:
Journal of Materials Chemistry C
影响因子:
6.4
作者:
[Bestelink E]
通讯作者:
Bestelink E
Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors
通过 IGZO 源栅薄膜晶体管的纳米级接触工程提高热稳定性的证据
DOI:
10.1109/ted.2023.3276337
发表时间:
2023
期刊:
IEEE Transactions on Electron Devices
影响因子:
3.1
作者:
[Alfarisyi S]
通讯作者:
Alfarisyi S
DOI:
10.1109/ted.2023.3331668
发表时间:
2023-11-21
期刊:
IEEE TRANSACTIONS ON ELECTRON DEVICES
影响因子:
3.1
作者:
[Bestelink,Eva, Niang,Kham M., Sporea,Radu A.]
通讯作者:
Sporea,Radu A.
DOI:
10.1109/ted.2021.3103491
发表时间:
2021-10-01
期刊:
IEEE TRANSACTIONS ON ELECTRON DEVICES
影响因子:
3.1
作者:
[Bestelink, Eva, de Sagazan, Olivier, Sporea, Radu A.]
通讯作者:
Sporea, Radu A.
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