Electrodeposited 2D Transition Metal Dichalcogenides on graphene: a novel route towards scalable flexible electronics

与石墨烯一样，ME2 （M =过渡金属，E =硫、硒或碲）是一层过渡金属二硫化物（TMDC），由单个或几个原子厚的共价键结晶格组成。这些原子片表现出非凡的电子和光学特性，因为它们不会受到悬垂键和表面陷阱态的影响。层之间的范德华相互作用使得不同的材料可以在没有晶格匹配限制的情况下集成在一起。此外，这几层材料可以承受10%的机械张力，这使得这些材料特别适合柔性电子设备，预计未来五年柔性电子设备的市场价值将超过100亿英镑。二维材料的异质结构和石墨烯在各种电子、光电、能源和传感器应用方面具有巨大的潜力，但受到技术限制。这项提议的目的是利用我们最近在金属和石墨烯电极上电沉积少量二维硫族化合物（如MoS2和WS2）方面的突破。我们将通过各种设备展示这些优势，这些设备将最先进的性能与可扩展的、工业上可接受的柔性基板加工相结合。通过与项目合作伙伴的合作，我们的目标是将这项工作产生的潜在社会和经济影响最大化。

Like graphene, a layer of a transition metal dichalcogenide (TMDC), ME2 (where M = transition metal and E = sulfur, selenium or tellurium), consists of a single- or few-atom-thick, covalently bonded lattice. These atomic sheets exhibit extraordinary electronic and optical properties, as they do not suffer from dangling bonds and trap states at the surface. The van der Waals interactions between the layers allows the integration of very different materials without the constraints of crystal lattice matching. Moreover, those few layers can withstand mechanical strains of 10%, which makes these materials particularly suitable for flexible electronic devices, a market expected to be worth more than £10B in the next five years. Heterostructures of 2D materials and graphene have great potential for various electronic, opto-electronic, energy, and sensor applications but are held back by technological limitations. It is the intention of this proposal to take advantage of our recent breakthroughs in electrodeposition of few layer 2D chalcogenides, such as MoS2 and WS2, on metal as well graphene electrodes. We will demonstrate these advantages through a variety of devices which combine state-of-the-art performance together with scalable, industrially acceptable processing on flexible substrates. Working with our project partners we will aim to maximise the potential societal and economic impacts that emerge from this work.