Device Level Characterisation of Outphasing Amplifiers

放大器目前是通过级联放大器设计的三个关键部分以系统的方式构建的。它们是匹配网络、偏置T型结构和功率合成器。然而，每个部分都有其自身的局限性，级联时很少互补。异相放大器目前以类似的方式构建，导致限制多于益处的结构。尽管这些优点有可能超越目前可用的放大器产品，但需要在设计异相放大器方面进行根本性的改变。而不是独立设计放大器结构的每个部分，并将它们级联成完整的系统，这里提出的工作将利用卡迪夫大学的波形工程测试设置，以探测晶体管内部，以便可以观察到的特性，这是不可能与当前的技术。这将提供对器件级异相现象的更深入了解，由此可以开发出包括匹配、偏置和功率组合到单个结构中的整体设计。波形工程测试设置是卡迪夫大学独有的，是一个正在进行的项目的一部分，以更好地了解设备的性能。博士项目不关心这种测试装置的开发，它将其视为进一步研究异相放大器的工具。

Amplifiers are currently built in a systematic way by cascading three key parts of amplifier design. They are the matching network, bias T structure and power combiner. However each part has its own limitations which rarely complement each other when cascaded. The outphasing amplifier is currently built in a similar fashion resulting in a structure that has more limitations than benefits. Although these benefits have the potential to outperform currently available amplifier products, a radical change in designing outphasing amplifiers is required. Rather than designing each part of an amplifier structure independently and cascading them into the complete system, the work proposed here will utilise Cardiff University's Waveform Engineering test setup to probe inside the transistor such that the characteristics can be observed which are not possible with current techniques. This will provide greater insight into the outphasing phenomena on the device level from which a holistic design can be developed encompassing the matching, biasing and power combining into a single structure. The Waveform Engineering test setup is unique to Cardiff University and is part of an ongoing project to better understand device physic. The PhD project does not concern the development of this test setup, it regards it as a tool to further the research into outphasing amplifiers.