Spatial Control of Semiconductor Band Gaps: A Feasibility Study

本提案旨在证明半导体光学元件单片集成新工艺的可行性。在预图型GaAs衬底上外延生长，具有良好定义的台面尺寸和形状，将用于生产基于稀氮化半导体材料GaInNAs的离散和集成量子阱（QW）发射器阵列。台面的几何形状和结构将控制量子阱的带隙，而通过图案在空间上控制带隙的能力将促进单次生长运行中的集成。该项目有潜力提供一种创新的方法，最终将用于集成不同的光学元件，用于包括通信和传感在内的一系列技术。

This proposal aims to demonstrate the feasibility of a novel process for monolithic integration of semiconductor optical components. Epitaxial growth on pre-patterned GaAs substrates, with well defined mesa sizes and shapes, will be used to produce arrays of discrete and integrated quantum well (QW) emitters based on the dilute nitride semiconductor material, GaInNAs. The geometry and structure of the mesas will govern the band gap of the QW and it is the ability to spatially control the band gap via patterning that will facilitate integration in a single growth run. This project has the potential to deliver an innovative approach that will ultimately be exploited for the integration of different optical components for a range of technologies including communications and sensing.