Spatial Control of Semiconductor Band Gaps: A Feasibility Study

该方案旨在论证半导体光学元件单片集成的新工艺的可行性。在具有良好台面尺寸和形状的预图案化的GaAs衬底上进行外延生长，将被用于基于稀氮化物半导体材料GaInNAs的离散和集成量子井(QW)发射体阵列。台面的几何和结构将控制量子阱的带隙，而通过图案化在空间上控制带隙的能力将有助于在一次生长中实现集成。该项目有可能提供一种创新的方法，最终将用于集成包括通信和传感在内的一系列技术的不同光学部件。

This proposal aims to demonstrate the feasibility of a novel process for monolithic integration of semiconductor optical components. Epitaxial growth on pre-patterned GaAs substrates, with well defined mesa sizes and shapes, will be used to produce arrays of discrete and integrated quantum well (QW) emitters based on the dilute nitride semiconductor material, GaInNAs. The geometry and structure of the mesas will govern the band gap of the QW and it is the ability to spatially control the band gap via patterning that will facilitate integration in a single growth run. This project has the potential to deliver an innovative approach that will ultimately be exploited for the integration of different optical components for a range of technologies including communications and sensing.