HIGH POWER SEMICONDUCTOR TERAHERTZ FREQUENCY SOURCES FOR IMAGING APPLICATIONS

尽管有巨大的科学和最近的技术兴趣，但~ 300 GHz至3 THz之间的太赫兹频率范围仍然是电磁频谱中利用最少的区域之一。位于成熟的微波和光学技术之间，直到最近，太赫兹系统才受到商业上的重视，过去35年的关键驱动力是地球和空间科学的分子光谱学研究。太赫兹传感器和源的商业用途现在开始出现，因为该技术被视为医疗，健康，工业和安全部门新仪器的推动者，因此有望首次将该领域推向大众市场。为了满足欧洲太赫兹社区对高达600 GHz的半导体电子元件的需求，并因此建立此类器件的欧洲来源，（古恩二极管加乘法器），该项目的主要目标是执行从曼彻斯特大学到e2 v有限公司的技术转让，以便设计，制造和测试太赫兹源组件，覆盖100至600 GHz的范围，并在600 GHz的电子功率至少为1至5 mW是可测量的目标。随着更高功率的太赫兹频率源变得越来越可用，这将使便携式，紧凑的成像仪器在0.1至1太赫兹跟随。

Despite great scientific and, recently technological, interests the terahertz frequency range between ~ 300 GHz to 3THz remains one of the least exploited regions of the electromagnetic spectrum. Located between the well established microwave and optical technologies, little commercial emphasis had been placed on terahertz systems until recently with the key drivers for the last 35 years being the study of molecular spectroscopy for Earth and Space sciences. Commercial uses for terahertz sensors and sources are now beginning to emerge as the technology is seen as the enabler of new instrumentation in the medical, health, industrial and security sectors and is thus promising to bring the field to the mass market for the first time. In order for e2v ltd to satisfy the European's Terahertz community demands for semiconductor electronic component up to 600GHz and hence to establish a European source of such devices (Gunn diodes plus multipliers) fit for purpose, the main objective of this project is to execute a technology transfer from the University of Manchester to e2v ltd in order to design, fabricate and test Terahertz source components covering the range 100 to 600 GHz and with at least 1 to 5mW of electronic power at 600 GHz being the measurable goal. As higher power Terahertz frequency sources become more available this will enable portable, compact imaging instruments in the 0.1 to 1 THz to follow.