Development of efficient all silicon optoelectronic devices based on silicon nanocrystal technology

从硅中有效地产生光将对光电子学和微电子学的集成产生相当大的影响。从这个角度来看，硅纳米光子学的基础上使用的硅纳米晶体（Si-nc）是一个有前途的技术，物理上相对较好地理解，并已证明thegeneration的实际水平的发光。这项技术现在正面临着与其在现实世界中的光电子应用有关的问题，这些应用总是涉及开发基于Si-nc的激光器件。Si纳米光子学研究中的两个重要挑战是提高Si-nc/SiO2层的光学增益和有效的电流注入以激发Si-nc（电致发光）。基于我们的团队在过去几年中获得的关于通过离子注入获得的Si-nc的发光特性的知识和专业知识，所提出的研究的目标是在全Si结构中实现显著的光学增益，并开发实现高效电致发光的新方法。1)基于我们对Si-nc分布的了解，使用计算机代码来模拟传播介质的光学特性，将设计布拉格型结构以优化器件中的光学增益。2)我们将研究Si-nc生长条件和与生长介质相关的参数（厚度、形状、Si-nc浓度和分布）对光学增益的影响。3)将测试基于产生施主-受主能级的物种的共注入的制造方法，以促进电荷注入，从而实现有效的EL。4)在有足够的光增益的情况下，我们将尝试制作一个亚波长周期结构的谐振腔。5)研究了这些器件的激光特性和Si-nc特性。虽然硅基激光器件的发展还没有得到保证，但从这项研究中获得的知识肯定会导致，例如，一种廉价的宽带光放大介质的发展，基于硅，在许多领域的应用。

Efficiently producing light from silicon would have a considerable impact on the integration of optoelectronicsand micro-electronics. From this point of view, Si nanophotonics based on the use of silicon nanocrystals(Si-nc) is a promising technology that is physically relatively well understood and that has demonstrated thegeneration of practical levels of luminescence. This technology is now confronting issues related to its use inreal world opto-electronic applications which invariably involve developing Si-nc based laser devices. Twoimportant challenges in the research on Si nanophotonics are the increase of the optical gain in the Si-nc/SiO2layer and an efficient current injection for electron excitation of the Si-nc (electroluminescence, EL). Based onthe knowledge and expertise our team has acquired over the past few years on the luminescence properties ofSi-nc obtained by ion implantation, the objective of the proposed research is to achieve significant optical gainin an all-Si structure and develop new ways to achieve efficient electroluminescence. 1) Using a computer codeto model the optical properties of the propagating medium based on our knowledge of the Si-nc distribution,Bragg type structures will be designed to optimize the optical gain in the device. 2) We will investigate theeffect on optical gain of the Si-nc growth conditions and the parameters associated with the propagatingmedium (thickness, shape, Si-nc concentration and distribution). 3) Fabrication methods based on theco-implantation of species that produce donor-acceptor levels will be tested in order to promote chargeinjection in order to achieve efficient EL. 4) With sufficient optical gain and by fabricating sub-wavelengthperiodic structure to form a resonant cavity, we will attempt the fabrication of an all-silicon laser. 5) The lasingproperties and Si-nc characteristics of these devices will be investigated. Although the development of Si-ncbased laser devices is not assured, the knowledge acquired from this research will certainly lead, for example,to the development of a cheap broadband optical amplification medium based on silicon, useful in many fieldsof application.