Group III nitride heterostructured nanowires for light emitting diodes

氮化镓（GaN）和铟氮化镓（InGaN）发光二极管（led）目前是一个价值数十亿美元的产业，应用于手机背光、交通信号、信息显示板和投影电视。固态照明取代白炽灯和荧光灯的发展代表了一个更大的全球市场，伴随着巨大的能源节约和相应的温室气体排放减少，由于led的低能耗。传统的LED技术目前受到与材料沉积过程相关的成本、产量和性能问题的限制。半导体纳米线这一新兴领域使得任意高光学质量的材料和合金都可以低成本地沉积。这将为led带来新的波长和更高的能源效率。纳米线异质结构将通过金属有机化学气相沉积生长，通过显微镜和电表征技术进行表征，并将其纳入器件中。本项目将研究这些纳米线异质结构的材料科学，并研究提高纳米线led的效率、亮度和光谱发射范围的策略。

Gallium nitride (GaN) and Indium Gallium Nitride (InGaN) light emitting diodes (LEDs) are currently a multibillion dollar industry with applications in cell phone back lighting, traffic signals, message display boards, and projection television. The development of solid state lighting to displace incandescent and fluorescent lamps for general illumination represents an even larger worldwide market, accompanied by a huge energy savings and corresponding greenhouse emissions reduction due to the lower energy consumption of LEDs. Conventional LED technology is presently limited by cost, yield, and performance issues that are related to the materials deposition process. The emerging field of semiconductors nanowires allows arbitrary materials and alloys of high optical quality to be deposited inexpensively. This will bring new wavelengths and higher energy efficiencies to LEDs. Nanowire heterostructures will be grown by metal organic chemical vapor deposition, characterized through microscopy and electrical characterization techniques, and be incorporated into devices. This project will study the materials science of these nanowire heterostructures, and investigate strategies to increase the efficiency, brightness, and spectral emission range of nanowire LEDs.