Fabrication of 2D material devices using large-area manufacturable methods

拟议的研究计划涉及使用可制造方法制造2D材料（石墨烯类材料）设备。2D材料是结晶单层材料，其中最著名的是石墨烯。最近，其他2D材料，如单层Si（或硅烯），Ge（或germanene），P（或磷烯）和MoS 2显示出非凡的特性：高测量载流子迁移率（>200 cm 2/Vs），理论载流子迁移率比它们的本体对应物大数倍，由施加的垂直电场控制的可调带隙，高表面积-体积比，用于选择性气体检测的电阻的各向异性变化、柔性以及顺磁性和自旋电子学性质。然而，文献中目前报道的装置将溶液中的2D材料从单晶衬底机械地转移到形成电接触的非导电衬底，这是不可重复且不可制造的过程。因此，需要创新来开发制造友好的方法来制备2D材料器件。

The proposed research program involves the fabrication of 2D materials (graphene-like materials) devices using manufacturable methods. 2D materials are crystalline monolayer materials, the most famous of which is graphene. Recently, other 2D materials such as monolayer Si (or silicene), Ge (or germanene), P (or phosphorene), and MoS2 have shown extraordinary properties: high measured carrier mobility (>200 cm2/Vs), theoretical carrier mobility multiple times larger than their bulk counterpart, tuneable bandgap controlled by applied vertical electric field, high surface-volume ratio, anisotropic changes in resistance for selective gas detection, flexibility, and paramagnetic and spintronic properties. However, devices currently reported in literature mechanically transfer 2D materials in solution from a single crystal substrate, to a non-conducting substrate where electrical contacts are made, a process which is non-repeatable and not manufacturable. Therefore, innovation is required to develop manufacturing-friendly methods to prepare 2D material devices.