Amorphous selenium helium ion camera

该项目涉及KA成像（基奇纳，ON）和西蒙弗雷泽大学（SFU）物理系之间的合作。KA成像将提供一个原型相机成像传输氦离子在现有的氦离子显微镜（HIM）在SFU。该相机将包括一个光电导非晶硒（a-Se）像素阵列，集成了低噪声互补金属氧化物半导体（CMOS）读出电路。将评估摄像机的能力，包括分辨率、灵敏度、响应时间和可靠性。这将是这家公司的一个新应用，该公司目前为医疗、兽医和工业应用制造一系列X射线成像工具。与SFU HIM中已经运行的现有Si基p-i-n二极管阵列相机相比，预期的相机像素间距可行，小至8微米，将分辨率提高7倍。照相机的主要成分a-Se的无定形性质自然不易受到辐射损伤，因此，预计比晶体Si像素更可靠。如果成功，该相机将进一步发展一种新的成像技术，称为透射氦离子显微镜（THIM）的可能感兴趣的其他HIM系统国际（3其他希姆斯在加拿大，50国际）。该技术可能会挑战透射电子显微镜更好的分辨率和灵敏度的原子缺陷给予较小的波长和较大的相互作用截面的He离子（30千伏）相比，电子（200千伏）。

This project involves a collaboration between KA Imaging (Kitchener, ON) and the Simon Fraser University(SFU), Physics Dept. KA Imaging will provide a prototype camera for imaging transmitted helium ions in anexisting helium ion microscope (HIM) at SFU. The camera will consist of an array of photoconductiveamorphous-selenium (a-Se) pixels integrated with a low-noise complementary metal-oxide semiconductor(CMOS) read-out circuitry. The capabilities of the camera including resolution, sensitivity, response time, andreliability will be evaluated. This will be a new application for this company who currently manufactures arange of x-ray imaging tools for medical, veterinarian, and industrial applications. The expected camera pixelspacing feasible, as small as 8 microns, would increase the resolution by a factor 7 compared to the existingSi-based p-i-n diodes array camera already operating in the HIM at SFU. The amorphous nature of the primarycomponent of the camera, a-Se, is naturally less susceptible to radiation damage and is, therefore, expected tobe more reliable than crystalline Si pixels. If successful, the camera will further the development of a newimaging technique called transmission He ion microscopy (THIM) of likely interest to other HIM systemsinternationally (3 other HIMs in Canada, 50 international). The technique may potentially challengetransmission electron microscopy with better resolution and sensitivity to atomic defects given the smallerwavelength and larger interaction cross-sections for He ions (30 kV) compared to electrons (200 kV).