Graphene on silicon technology for next generation microwave circuits

石墨烯容易获得且易于制造，但繁琐的转移过程，高集成度和 ** 较低的成本仍然具有挑战性。肯尼迪实验室正在将位于纽约州伊萨卡的康奈尔纳米工厂 ** 开发的工艺技术转移到位于汉密尔顿的麦克马斯特新兴器件技术中心（CEDT），以在硅衬底上开发 ** 石墨烯，以解决高度集成的问题。硅技术仍有望成为电子应用的主力，因此也是SOI CMOS中石墨烯高产的商业案例。石墨烯不可替代的高电子迁移率有望提供能够在GHz频率下工作的高性能晶体管 **。通过降低石墨烯和工程金属 ** 触点之间的电阻，迁移率高达940 mS/m，但加工并不简单，拟议的工作 ** 旨在生产高质量的微波晶体管，用于实现强大的电光驱动器。

Graphene is readily available and easy to manufacture but cumbersome transfer processes, high integration and**lower costs are still challenging. Kennedy Labs is moving process technology developed at Cornell Nanofabrication**Facility in Ithaca NY to the Center for Emerging Device Technologies (CEDT) at McMaster in Hamilton, to develop**graphene on silicon substrates to address the issue of high integration. Silicon technologies are still expected to**remain the workhorse for electronic applications and hence the business case for high production of graphene in**SOI CMOS. The irreplaceable high electron mobility of graphene promises to deliver high performance transistors**capable of operation at GHz frequencies. By reducing the resistance between graphene and engineered metal**contacts, mobilities as high as 940 mS/m have been recorded but processing is not trivial, and the proposed work**aims at producing high quality microwave transistors for the implementation of robust electro-optical drivers.