Controlling and Characterizing the Conductivity and Materials Quality of CVD-grown h-BN

本研究旨在利用离子注入沉积的异质原子（称为掺杂剂）来可控地改变单原子厚六方氮化硼材料的电导率和载流子迁移率。这些掺杂剂将在晶格中引入连锁碰撞，并替代晶格中缺失的硼原子或氮原子。为了测量我们是否成功地加入了这些原子，我们观察了电导率和光学性质的变化作为离子剂量的函数，并使用高分辨率透射电子显微镜和电子能量损失光谱在原子尺度上对掺杂原子进行了成像。如果成功，我们**将有直接的和推断的成立证明，并对该**过程的可控性有一个很好的估计。这将为肯尼迪实验室制造的高质量二维材料增加另一种产品。

This work seeks to controllably change the conductivity and carrier mobility in single-atom thick hexagonal boron**nitride materials using heterogenous atoms (called dopants) deposited using ion implantation. These dopants will**be introduce knock-on collisions in the lattice and substitute for missing boron or nitrogen atoms in the lattice. In**order to measure whether we successfully incorporated these atoms, we look at the change in the electrical**conductivity and optical properties as a function of ion dose, and image the dopant atoms at the atomic scale**using high-resolution transmission electron microscopy and electron energy-loss spectroscopy. If successful, we**will have direct as well as inferential proof of incorporation and have a good estimate of the controllability of this**process. This will add another product to the high-quality 2-D materials manufactured by Kennedy Labs.