Beyond Graphene - Design, Growth, and Characterization of Alternative 2-Dimensional Materials

超越石墨烯 - 替代二维材料的设计、生长和表征

• 批准号: RGPIN-2017-06449
• 负责人: Bassim, Nabil
• 金额: $ 2.11万
• 依托单位: McMaster University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2018
• 资助国家: 加拿大
• 起止时间: 2018-01-01 至 2019-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=644759
• 关键词: Beyond; Graphene; Design; Growth; Characterization

The discovery of two-dimensional materials, or planar sheets that are 1 (or several) atom(s) thick, in recent years has generated tremendous excitement and research activity. Graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenides (TMD's) have garnered the lion share of attention and progress has been made in the development of novel electronic, optical and energy applications with these materials. 2-D materials face two critical challenges for their practical use in technology: 1) Each material (like their 3-D allotropes) has specific properties that may limit their use. For example, since graphene does not have a band gap, its use is limited for sensing or switching applications in electronic devices. This has led to nascent work (with superlative properties predicted by computational methods) on alternative 2-D materials, like silicene, germanene and phosphorene, which have been subsequently synthesized in some manner. 2) 2-D materials are not easy to grow at large scale and pose integration challenges for manufacturing workflows. Many of the vanguard experimental results reported on were the result of mechanical exfoliation. Since then, considerable advances in chemical-vapor deposition growth, chemical exfoliation, and other preparations have been developed. However, for alternative 2-D materials, very little work exits.******The aim of this research program is to develop a novel, scaleable method to grow the alternative 2-dimensional materials silicene, phosphorene, and germanene using ion implantation. Recent work showed that the implantation of carbon into copper, followed by a subsequent anneal results in the development of a high-quality graphene layer on the copper surface [1]. This proposal intends to extend this to other Group IV 2-D materials. During this study, we will develop 1) appropriate growth methods to fabricate wafer-scale silicene, germanene, and phosphorene, 2) a computational and thermodynamic model that describes the chemistry of ion implantation and self-assembly of 2-D layers and 3) the advanced characterization of the atomic, electronic, and chemical structure of these materials using transmission electron microscopy (TEM) and 4) integration into baseline electronic devices. These findings can ultimately provide us in-depth knowledge of the fundamental processes of implant chemistry, a mechanism for ion implantation to fabricate scaleable novel 2-D materials, and interesting new materials for further study. Ultimately, successful growth of these new materials could lead to faster and more sensitive electronic devices and, in the case of silicene and germanene, could be integrated (as compared to graphene) into already-existing semiconductor workflows. There is potential to for commercial advances in the Canadian semiconductor manufacturing sector and for training high quality scientists as a result of this research.

近年来，二维材料，即一个(或几个)原子(S)厚度的平面片的发现，引起了巨大的兴奋和研究活动。石墨烯、六方氮化硼(h-BN)和过渡金属二卤化物(TMD)引起了人们极大的关注，这些材料在开发新的电子、光学和能源应用方面取得了进展。2-D材料在技术上的实际应用面临两个关键挑战：1)每种材料(就像它们的3-D同素异形体一样)具有可能限制其使用的特定性质。例如，由于石墨烯没有带隙，其在电子设备中的传感或开关应用受到限制。这导致了对替代二维材料的初步研究(通过计算方法预测出了最高的性能)，如硅烯、锗和磷烯，这些材料随后以某种方式合成。2)2-D材料不容易大规模生长，对制造工作流构成集成挑战。报道的许多先锋实验结果都是机械剥离的结果。从那时起，在化学气相沉积生长、化学剥离和其他制备方面取得了相当大的进展。然而，对于替代的二维材料，几乎没有工作存在。*本研究计划的目的是开发一种新颖的、可扩展的方法，利用离子注入来生长替代的二维材料硅烯、磷烯和锗。最近的工作表明，在铜中注入碳，然后进行随后的退火热处理，可以在铜表面形成高质量的石墨烯层[1]。这项提议打算将这一点扩展到其他第IV类2-D材料。在这项研究中，我们将开发1)合适的生长方法来制备晶片规模的硅烯、锗和磷烯，2)描述离子注入和2-D层自组装的化学的计算和热力学模型，3)利用透射电子显微镜(TEM)和4)集成到基线电子器件中对这些材料的原子、电子和化学结构进行高级表征。这些发现最终可以为我们深入了解注入化学的基本过程，为离子注入制备可缩放的新型二维材料提供一种机制，并为进一步研究提供有趣的新材料。最终，这些新材料的成功生长可能导致更快、更灵敏的电子设备，就硅烯和锗而言，可以将其整合到现有的半导体工作流程中(与石墨烯相比)。作为这项研究的结果，加拿大半导体制造部门的商业进步和高素质科学家的培训具有潜力。