Extending the performance of SiC and GaN power devices through predictive switching

基于宽带隙材料(碳化硅和氮化镓)的电子器件的新时代，如在白色LED中发现的那样，有望在电源和电动汽车充电器等电力设备方面做出重大改进。它们还将改变并网电池等设备的性能，以高效的方式平衡每个电池的充电，从而可以建造非常大的电网支持电池。与硅功率半导体器件相比，预期的增益非常大。然而，目前这些收益还没有实现，只有大约2-10倍的改善。值得注意的是，这与特斯拉Model 3(原文如此)等引人注目的应用中看到的高效传导模式有关。然而，要解锁新的应用需要在开关频率和开关速度上有很大的变化，并且对于产生的EMI也需要减轻这一影响。该项目旨在通过使用非常快速的操作要求计算来解决这些问题，以便可以针对每个开关时刻优化开关，从而提供低损耗和低EMI，从而实现紧凑、可靠和高效的设备。

The new era of electronic devices based on Wide Band Gap materials (SiC and GaN), as found in white LEDs, promises significant improvements in electrical power equipment such as power supplies and EV chargers. They will also transform the performance of equipment such as grid connected batteries, by balancing the charging of each cell in an efficient manner such that very large grid support batteries can be built. The expected gains over Si power semiconductor devices are very large. However, at present these gains have not been achieved, with improvements of only around a factor of 2-10 seen. Notably this is associated with a highly efficient conduction mode seen in compelling applications such as the Tesla model 3 (SiC). However, to unlock new applications requires a large shift in the switching frequency and speed of switching and the effects of this also need to be mitigated regarding the EMI produced. This project seeks to address these concerns by use of very fast calculations of the operating requirements such that the switching can be optimised for each switching moment, giving low losses and low EMI leading to compact, reliable and efficient equipment.