1.5 um InAs/InP Quantum Dot Vertical-Cavity Surface-Emitting Lasers (QD VCSEL)

InP量子阱（QW）垂直腔面发射激光器（VCSEL）的最新进展促进了其在光接入网中的应用，这得益于其占地面积更小，晶圆规模测试，功耗更低，特别是与传统的边缘发射激光器相比成本更低的优势。与量子点（QW）相对应，量子点（QD）将载流子约束的维数从二维降至零维，从而形成离散的能级结构，从而改善阈值电流和输出功率的温度依赖性，降低阈值电流密度，提高材料增益，提高差分增益，减小QD激光器的线宽增强因子。InP QD与垂直腔体相结合，即InP QD VCSEL，在成本较低的同时，具有更好的性能。事实上，目前报道的一项研究工作表明，InP QD VCSEL确实具有更低的阈值电流，即更低的功耗。康科迪亚的张博士与渥太华的NRC合作，研究了十年的InP QD边缘发射激光器。该项目将与伦敦大学学院（UCL）合作，启动InAs/InP QD VCSELs的研究。通过该项目，将与UCL在InP QD VCSELs方面建立合作，以获取设计技术的ip并培养HQP。刘博士在纳米级结构器件（如激光器）的制造方面拥有强大的专业知识，他的专业知识与张博士互补，张博士在建模方面研究和设计了10年的QD激光器。该项目将与英国伦敦大学学院合作，开始研究和设计低成本的高性能InAs/InP QD vcsel，使加拿大在创新的低成本激光技术方面受益。

Recent advance in InP quantum well (QW) vertical cavity surface-emitting laser (VCSEL) emitting at 1.5 um has promoted its applications for optical access networks, thanks to their advantages of smaller footprint, wafer-scale testing, lower power consumption and in particular much lower cost compared with conventional edge-emitting counterparts. Corresponding to QW, quantum dot (QD) introduces a reduction of dimensionality of the carrier confinement from 2-D to 0-D, resulting in the formation of a discrete energy level structure, thus QDs would induce improvements in temperature dependence of threshold current and output power, lower threshold current density and increased material gain, high differential gain, and small linewidth enhancement factor for QD lasers. InP QD combined with vertical cavity, i.e. InP QD VCSEL, would lead to better performances in addition to low cost. Indeed, one research work was reported so far, and it was shown that InP QD VCSEL does have a much lower threshold current, i.e. lower power consumption. Dr. Zhang at Concordia has researched InP QD edge-emitting lasers for a decade, collaborating with NRC in Ottawa. This project will kick off research of InAs/InP QD VCSELs, collaborating with University College London (UCL). By this project, the collaboration with UCL in InP QD VCSELs will be established to acquire IPs of design technologies and train HQP. Dr. Liu has strong expertise in fabrication of nano-scale structural devices, such as lasers, whose expertise is complementary to Dr. Zhang, who has investigated and designed QD lasers for 10 years in modeling. This project will kick off collaboration with UCL in UK and start to investigate and design low-cost high-performance InAs/InP QD VCSELs, benefit to Canada in innovated low-cost laser technology.