Morphology, Structure, and Adhesion of Plasma-Deposited ThinFilms
Morphology, Structure, and Adhesion of Plasma-Deposited ThinFilms
批准号:
8611473
负责人:
Dennis Hess
金额:
$26.73万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1987
资助国家:
美国
项目状态:
已结题
起止时间:
1987-01-01 至 1990-06-30
中文摘要
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英文摘要
Plasma-enhanced Chemical Vapor Deposition (PECVD) techniques are used to deposit thin films as passivation coatings and for electronic and optical device structures. The PI proposes a fundamental study of correlating deposition parameters with morphology, structure, and adhesion of the films to the substrate. Si3N4 will be used as substrate in view of its wide application base. The PI is a competent researcher and the proposed study has potential for advancing the fundamental knowledge and the technology base. This project will be jointly funded by the Thermodynamics and Transport Phenomena Program and the Materials Engineering and Processing Program.
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MRSEC: The Georgia Tech Laboratory for New Electronic Materials
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批准号:0820382
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项目类别:Cooperative Agreement
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资助金额:$675.0万
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财政年份:2008
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负责人:Dennis Hess
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依托单位:
Low Temperature Plasma Etching of Copper to Minimize Size Effects in Sub-100 nm Features
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批准号:0755607
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项目类别:Continuing Grant
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资助金额:$30.0万
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财政年份:2008
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负责人:Dennis Hess
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依托单位:
GOALI: Photoresist Dissolution and Stripping in Gas Expanded Liquids
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批准号:0343142
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项目类别:Continuing Grant
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资助金额:$34.73万
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财政年份:2004
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负责人:Dennis Hess
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依托单位:
LT: Removal of Organic Films and Contaminants from Surfaces Using Elevated Pressure, Elevated Temperature Water
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批准号:9727249
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:1997
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负责人:Dennis Hess
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依托单位:
Plasma Oxidation/Anodization of Silicon Films for Photovoltaic and Flat Panel Display Applications
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批准号:9214138
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项目类别:Continuing Grant
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资助金额:$23.7万
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财政年份:1992
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负责人:Dennis Hess
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依托单位:
Engineering Creativity Award: Microwave Plasma Induced Oxidation of Semiconductor
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批准号:8710988
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项目类别:Continuing Grant
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资助金额:$9.0万
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财政年份:1987
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负责人:Dennis Hess
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依托单位:
Etching of Aluminum in Halogen-Containing Gasses and Plasmas
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批准号:8319353
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项目类别:Continuing Grant
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资助金额:$20.47万
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财政年份:1984
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负责人:Dennis Hess
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依托单位:
Plasma Etching of Aluminum For Integrated Circuits Applications
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批准号:8021508
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项目类别:Continuing Grant
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资助金额:$16.55万
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财政年份:1981
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负责人:Dennis Hess
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依托单位:
Plasma Etching of Thin Films For Integrated Circuits
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批准号:7812236
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项目类别:Standard Grant
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资助金额:$7.8万
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财政年份:1979
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负责人:Dennis Hess
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依托单位:
海外基金