Morphology, Structure, and Adhesion of Plasma-Deposited ThinFilms

等离子体增强化学气相沉积（PECVD）技术用于沉积薄膜作为钝化涂层以及电子和光学器件结构。PI提出了一项基本研究，将沉积参数与薄膜的形态、结构和粘附力联系起来。考虑到氮化硅的广泛应用基础，我们将使用它作为衬底。PI是一名称职的研究人员，所提出的研究具有推进基础知识和技术基础的潜力。本项目将由热力学与输运现象计划和材料工程与加工计划共同资助。

Plasma-enhanced Chemical Vapor Deposition (PECVD) techniques are used to deposit thin films as passivation coatings and for electronic and optical device structures. The PI proposes a fundamental study of correlating deposition parameters with morphology, structure, and adhesion of the films to the substrate. Si3N4 will be used as substrate in view of its wide application base. The PI is a competent researcher and the proposed study has potential for advancing the fundamental knowledge and the technology base. This project will be jointly funded by the Thermodynamics and Transport Phenomena Program and the Materials Engineering and Processing Program.