MRSEC: The Georgia Tech Laboratory for New Electronic Materials
MRSEC: The Georgia Tech Laboratory for New Electronic Materials
批准号:
0820382
负责人:
Dennis Hess
金额:
$675.0万
依托单位国家:
美国
项目类别:
Cooperative Agreement
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-09-01 至 2015-08-31
中文摘要
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英文摘要
The Materials Research Science and Engineering Center (MRSEC) at the Georgia Institute of Technology addresses the need for new electronic materials and associated processes for applications in microelectronics, optics and sensors. Materials growth methods, electrical, chemical and physical characterization, pattern generation, device fabrication, and theory/modeling are invoked to ensure holistic and interdisciplinary approaches to the development and investigation of novel materials and devices. The single Interdisciplinary Research Group on Graphene Science and Technology investigates fabrication and characterization approaches for the implementation of epitaxial graphene as an electronic material. The MRSEC has extensive collaborations with corporations, national laboratories and universities world-wide. Broad educational activities and outreach programs that integrate materials research into K-12, university and professional education are supported and fostered. Shared experimental facilities at Georgia Tech and partner institutions ensure the ability to fabricate and characterize materials for use in a variety of applications.
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Low Temperature Plasma Etching of Copper to Minimize Size Effects in Sub-100 nm Features
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批准号:0755607
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项目类别:Continuing Grant
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资助金额:$30.0万
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财政年份:2008
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负责人:Dennis Hess
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依托单位:
GOALI: Photoresist Dissolution and Stripping in Gas Expanded Liquids
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批准号:0343142
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项目类别:Continuing Grant
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资助金额:$34.73万
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财政年份:2004
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负责人:Dennis Hess
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依托单位:
LT: Removal of Organic Films and Contaminants from Surfaces Using Elevated Pressure, Elevated Temperature Water
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批准号:9727249
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:1997
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负责人:Dennis Hess
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依托单位:
Plasma Oxidation/Anodization of Silicon Films for Photovoltaic and Flat Panel Display Applications
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批准号:9214138
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项目类别:Continuing Grant
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资助金额:$23.7万
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财政年份:1992
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负责人:Dennis Hess
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依托单位:
Engineering Creativity Award: Microwave Plasma Induced Oxidation of Semiconductor
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批准号:8710988
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项目类别:Continuing Grant
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资助金额:$9.0万
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财政年份:1987
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负责人:Dennis Hess
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依托单位:
Morphology, Structure, and Adhesion of Plasma-Deposited ThinFilms
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批准号:8611473
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项目类别:Continuing Grant
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资助金额:$26.73万
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财政年份:1987
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负责人:Dennis Hess
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依托单位:
Etching of Aluminum in Halogen-Containing Gasses and Plasmas
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批准号:8319353
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项目类别:Continuing Grant
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资助金额:$20.47万
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财政年份:1984
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负责人:Dennis Hess
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依托单位:
Plasma Etching of Aluminum For Integrated Circuits Applications
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批准号:8021508
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项目类别:Continuing Grant
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资助金额:$16.55万
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财政年份:1981
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负责人:Dennis Hess
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依托单位:
Plasma Etching of Thin Films For Integrated Circuits
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批准号:7812236
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项目类别:Standard Grant
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资助金额:$7.8万
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财政年份:1979
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负责人:Dennis Hess
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依托单位:
海外基金