Engineering Creativity Award: Microwave Plasma Induced Oxidation of Semiconductor

这项研究的目的是开发一种手段， 在CVD期间获得微尺度热/能量测量 氧化过程，以建立基于量子的 运输模型 该模型用于广泛的 条件和材料。 将该模型应用于过程 与精细结构VHSIC类型器件相关的问题。 该项目是一个支持下的创意奖， 工程系本科生。

The objective of the research is to develop the means to obtain micro-scale thermal/energy measurements during the CVD oxidation processes in order to establish a quantum-based transport model. This model is used over a broad spectrum of conditions and materials. The model is applied to process related problems with fine architecture VHSIC type devices. This project is one supported under the Creativity Awards for Undergraduate Engineering Students.