Engineering Creativity Award: Microwave Plasma Induced Oxidation of Semiconductor

这项研究的目的是开发在CVD氧化过程中获得微尺度热/能量测量的手段，以便建立基于量子的传输模型。该模型适用于各种条件和材料。该模型被应用于处理精细结构VHSIC型器件的相关问题。这个项目是工科本科生创造力奖的资助项目。

The objective of the research is to develop the means to obtain micro-scale thermal/energy measurements during the CVD oxidation processes in order to establish a quantum-based transport model. This model is used over a broad spectrum of conditions and materials. The model is applied to process related problems with fine architecture VHSIC type devices. This project is one supported under the Creativity Awards for Undergraduate Engineering Students.