Research on Optimization of a Proton Bombarded Whiskerless Mixer/Varactor Schottky Barrier Diode Structure for Application

点击翻译按钮获取中文摘要

Millimeter wave receivers incorporating the highest quality Schottky barrier diodes presently utilize whisker contacted devices. The advent of millimeter wave integrated circuitry and planar array receivers underscores the requirement of a whiskerless, planar Schottky barrier device. At present, commercial manufacturere have produced whiskerless devices which have far less than optimum electrical characteristics. The object of this proposed research is to carry out work toward a whiskerless Schottky barrier mixer diode for use at and above l00 GHz signal frequency which will have electrical characteristics, including parasitic element values, as near as possible to those theoretically predicted. This research program will consist of a joint effort between the University of Virginia's Semiconductor Device Laboratory and the Fort Monmouth Electronic Technology and Devices Laboratory. It will involve optimization of device design and fabrication technology utilizing the MBE, ion implantation, and electron beam mask generation facilities at Fort Monmouth and the existing processing technologies and processing equipment at the University of Virginia. This project will involve one Ph.D. student for a period of one year.