Research on Optimization of a Proton Bombarded Whiskerless Mixer/Varactor Schottky Barrier Diode Structure for Application

采用最高质量肖特基二极管的毫米波接收器 势垒二极管目前使用晶须接触器件。 问世 毫米波集成电路和平面阵列接收器 强调了无须平面肖特基势垒的要求 设备. 目前，商业化的制造商已经生产出无须 这些器件的电特性远低于最佳值。 这项研究的目的是开展工作， 100GHz及以上无须肖特基势垒混频二极管 具有电气特性的信号频率，包括 寄生元件值，尽可能接近理论值 预测了 这项研究计划将包括一个共同的努力， 弗吉尼亚大学半导体器件实验室 以及蒙茅斯堡电子技术和设备实验室。 它 将涉及器件设计和制造技术的优化 利用分子束外延、离子注入和电子束掩模产生 蒙茅斯堡的设施和现有的加工技术 和加工设备。 这个项目 将涉及一位博士学生为期一年。

Millimeter wave receivers incorporating the highest quality Schottky barrier diodes presently utilize whisker contacted devices. The advent of millimeter wave integrated circuitry and planar array receivers underscores the requirement of a whiskerless, planar Schottky barrier device. At present, commercial manufacturere have produced whiskerless devices which have far less than optimum electrical characteristics. The object of this proposed research is to carry out work toward a whiskerless Schottky barrier mixer diode for use at and above l00 GHz signal frequency which will have electrical characteristics, including parasitic element values, as near as possible to those theoretically predicted. This research program will consist of a joint effort between the University of Virginia's Semiconductor Device Laboratory and the Fort Monmouth Electronic Technology and Devices Laboratory. It will involve optimization of device design and fabrication technology utilizing the MBE, ion implantation, and electron beam mask generation facilities at Fort Monmouth and the existing processing technologies and processing equipment at the University of Virginia. This project will involve one Ph.D. student for a period of one year.