Engineering Research Equipment Grant: Suss MJB3 Deep UV Mask Aligner

工程研究设备资助：Suss MJB3 Deep UV Mask Aligner

• 批准号: 8807680
• 负责人: Robert Mattauch
• 金额: $ 7万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-09-01 至 1990-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8807680&HistoricalAwards=false
• 关键词: Engineering; Research; Equipment; Grant; Suss

This grant is for a deep UV photolithography system to support the many research projects of the Semiconductor Device Laboratory at the University of Virginia. This laboratory is a world leader in the development of solid-state devices for low-noise, high frequency receiver applications. Although we have had great success with our current standard UV system, our ambitious plans for the next generation of high freuqency devices require feature sizes far beyond it's capability. Deep UV lithogrpahy is the most feasible technology for this work because it can achieve the required resolution (0.5 um) at a modest cost in terms of both capital investment and maintenance. The new devices that will be developed with this system will help to revolutionize high frequency receiver technology in terms of both sensitivity and maximum operating frequency. This will benefit many researchers who rely on these receivers for work in such areas as radio astronomy, chemical spectroscopy, plasma diagnostics, atmospheric research and high frequency communications and imaging systems.

这项拨款是为深紫外光刻系统，以支持 半导体器件实验室的许多研究项目， 弗吉尼亚大学。 该实验室是世界领先的 低噪声、高频固态器件的开发 接收器应用。 尽管我们在这方面取得了巨大成功 目前的标准紫外线系统，我们雄心勃勃的计划，为下一个 高频器件的产生需要的特征尺寸远远超过 而是能力 深紫外光刻是最可行的技术 因为它可以达到所需的分辨率（0.5 μ m） 在资本投资和维护方面都以适度的成本。 将使用该系统开发的新设备将有助于 革新高频接收器技术， 灵敏度和最高工作频率。 这将使许多人受益 研究人员依靠这些接收器在诸如 射电天文学、化学光谱学、等离子体诊断学， 大气研究和高频通信及成像 系统.