Fort Monmouth Interaction: Research on Optimization of a Whiskerless Mixer/Varactor Schottky Barrier Diode Structure for Application at Millimeter and Submillimeter Wavelengths

Fort Monmouth Interaction：用于毫米波和亚毫米波波长应用的无须混频器/变容二极管肖特基势垒二极管结构的优化研究

• 批准号: 8802881
• 负责人: Robert Mattauch
• 金额: $ 2.98万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-04-15 至 1989-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8802881&HistoricalAwards=false
• 关键词: Fort; Monmouth; Interaction; Research; Optimization

Millimeter wave receivers incorporating the highest quality Schottky barrier diodes presently utilize whisker contacted devices. The advent of millimeter wave integrated circuitry and planar array receivers underscores the requirement of a whiskerless, planar Schottky barrier device. At present, commercial manufacturers have produced whiskerless devices which have far less than optimum electrical characteristics. Research during the past year at the University of Virginia has resulted in the design and fabrication of a novel whiskerless Schottky diode with excellent DC and RF characteristics. The object of this proposed research is to continue work on the whiskerless Schottky barrier mixer diode for use at and above 100 GHz signal frequency which will have electrical characteristics, including parastic element values, as near as possible to those theoretically predicted. This research program will consist of a joint effort between the University of Virginia's Semiconductor Device Laboratory and the Fort Monmouth Electronic Technology and Devices Laboratory. It will involve optimization of device design and fabrication technology utilizing the MBE, electron beam mask generation ion implantation, and facilities at Fort Monmouth and the existing processing technologies and processing equipment at the University of Virginia. This project will involve 1 Masters student for a period of 1 year.

采用最高质量肖特基二极管的毫米波接收器 势垒二极管目前使用晶须接触器件。 的 毫米波集成电路和平面阵列的出现 接收器强调了一个无须，平面 肖特基势垒器件。 目前，商业制造商 生产的无须设备， 电气特性 在过去一年中， 弗吉尼亚大学已经设计和制造了一种 一种新型无须肖特基二极管，具有优异的直流和射频性能 特色 这项研究的目的是继续 工作的无须肖特基势垒混频器二极管，用于和 高于100 GHz的信号频率， 特征，包括寄生元素值，接近 理论上预测的可能性。 这项研究计划将 由弗吉尼亚大学 半导体器件实验室和蒙茅斯堡电子公司 技术和设备实验室。 它将涉及优化 利用分子束外延、电子 束掩模产生离子注入，以及蒙茅斯堡的设施 现有的加工工艺和加工设备， 弗吉尼亚大学 该项目将涉及1大师 学生为期一年。