Greater Than 1 Tera Herz GaAs Schottky Devices for Radio Astronomy and High Frequency Receiver Applications

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The goal of this research program is to investigate methods to improve the performance of high frequency semiconductor devices. This will be achieved through work in three closely related areas. These are: studies of the physics of high frequency electron transport in semiconductor devices; modeling and optimization of specific devices and device circuits; and investigations of fabrication technology. The specific devices to be investigated are those related to high frequency receiver applications. These devices are among the smallest semiconductor devices yet developed and are capable of operating well above 1 THz. Specific research will investigate: high frequency effects, the effect of fabrication technology on device characteristics, the use of a heterjunction to develop a high electron mobility diode structure, and the utilization of numerical modeling techniques to optimize diode parameters for mixer, varactor, varistor, and sideband generator applications at frequencies above 1 THz. The results of this research will be applicable to future development of other high frequency devices and circuits, such as high frequency transistors and eventually millimeter wavelength integrated circuits.