Greater Than 1 Tera Herz GaAs Schottky Devices for Radio Astronomy and High Frequency Receiver Applications

适用于射电天文学和高频接收器应用的大于 1 太赫兹 GaAs 肖特基器件

• 批准号: 8720850
• 负责人: Robert Mattauch
• 金额: $ 42.13万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-04-15 至 1991-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8720850&HistoricalAwards=false
• 关键词: Greater; Than; Tera; Herz; GaAs

The goal of this research program is to investigate methods to improve the performance of high frequency semiconductor devices. This will be achieved through work in three closely related areas. These are: studies of the physics of high frequency electron transport in semiconductor devices; modeling and optimization of specific devices and device circuits; and investigations of fabrication technology. The specific devices to be investigated are those related to high frequency receiver applications. These devices are among the smallest semiconductor devices yet developed and are capable of operating well above 1 THz. Specific research will investigate: high frequency effects, the effect of fabrication technology on device characteristics, the use of a heterjunction to develop a high electron mobility diode structure, and the utilization of numerical modeling techniques to optimize diode parameters for mixer, varactor, varistor, and sideband generator applications at frequencies above 1 THz. The results of this research will be applicable to future development of other high frequency devices and circuits, such as high frequency transistors and eventually millimeter wavelength integrated circuits.

这项研究计划的目标是调查方法，以改善 高频半导体器件的性能。 这将是 通过三个密切相关领域的工作实现。 这些是： 高频电子输运的物理研究 半导体器件;特定器件的建模和优化 和器件电路;以及制造技术的研究。 要调查的具体设备是那些与高 频率接收器应用。 这些设备是最小的 半导体器件尚未开发并且能够良好地操作 高于1 THz。 具体研究将调查：高频 制造工艺对器件的影响 特性，使用异质结来开发高电子 迁移率二极管结构，并利用数值模拟 优化混频器、变容二极管、变阻器 以及频率高于1THz的边带发生器应用。 的 本研究的成果将适用于未来的发展， 其它高频器件和电路，例如高频 晶体管和最终的毫米波长集成电路。