Engineering Research Equipment Grant: Reactive-Ion Etching System

工程研究设备资助：反应离子蚀刻系统

• 批准号: 8506241
• 负责人: Robert Mattauch
• 金额: $ 7.8万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1985
• 资助国家: 美国
• 起止时间: 1985-08-01 至 1987-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8506241&HistoricalAwards=false
• 关键词: Engineering; Research; Equipment; Grant; Reactive

The Semiconductor Device Laboratory at the University of Virginia will purchase a Reactive-Ion Etching system to support continuing advances in the technology of devices for use at sub-millimeter radio wavelengths. This laboratory has fabricated Schottky diodes which have been used successfully as radio-frequency mixers at frequencies as high as 2500 Gigahertz. Devices for use at these frequencies and beyond require dimensions of less than one micron. Such dimensions are achieved only with difficulty and imperfectly by current methods of chemical "wet" etching. Further advances in increasing maximum operating frequency, reducing noise, and reducing conversion loss in sub-millimeter wave devices require alternatives to wet chemical etching. The widely acknowledged feasible and necessary alternative is Reactive-Ion (Dry) Etching.

弗吉尼亚大学半导体器件实验室将 购买反应离子蚀刻系统，以支持持续发展 在亚毫米无线电设备技术中， 波长 该实验室已经制造出肖特基二极管， 已成功地用作射频混频器，频率高达 2500千兆赫 在这些频率和更高频率下使用的设备 需要小于1微米的尺寸。 这样的尺寸 通过目前的方法， 化学“湿”蚀刻。 进一步提高最大 工作频率，降低噪声，降低转换损耗， 亚毫米波器件需要湿化学品替代品 蚀刻 公认的可行和必要的替代方案是 反应离子（干法）蚀刻。