Laser Processing of Diamond and Boron Nitride Epitaxial Layers

金刚石和氮化硼外延层的激光加工

• 批准号: 8703621
• 负责人: Jagannadham Kasichainula
• 金额: $ 28.23万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-05-15 至 1992-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8703621&HistoricalAwards=false
• 关键词: Laser; Processing; Diamond; Boron; Nitride

This research supported by the National Science Foundation under the Materials Processing Joint Initiative. The objective of the research program is to study the epitaxial growth of thin film diamond and boron nitride using laser-induced photolytic and pyrolytic methods. The thin films are metastable at room temperature and atmospheric pressure, thereby requiring non- equilibrium methods to grow them. Pulsed laser irradiation introduces heating and transient atomic excitations locally to form the metastable phases. The materials will be grown epitaxially on magnesium oxide and silicon carbide on silicon substrates, where there are sets of major lattice planes which match those of the thin films. The diamond films will be doped during in-situ laser chemical vapor deposition by introducing dopant gases into the growth chamber. The emphasis in the research will be on the fundamental aspects of epitaxial growth, to include analysis of the formation of defects, and the effects of distribution of elastic strains and interfacial stresses. The thin films will be characterized using high-resolution and analytical transmission electron microscopy, Rutherford Backscattering Spectroscopy, Secondary Ion Mass Spectroscopy, Scanning Auger Electron Spectroscopy, Electron Spectroscopic Chemical Analysis, and Raman and infrared spectroscopy techniques will be used to characterize the chemical composition and the bonding characteristics. Some of the films will be evaluated for mechanical and electrical properties. Diamond and boron nitride are the hardest of all materials known to man, and are useful in applications such as cutting tools and wear resistant coatings. Other useful properties of diamond include high dielectric strength, chemical inertness, optical transparency, large band gap, high electrical resistivity, and high thermal conductivity. These properties make the material potentially useful for semiconductor devices for operation in high temperature and high radiation environments.

这项由美国国家科学基金会资助的研究 根据材料加工联合倡议。 客观 的研究计划是研究薄的外延生长 利用激光诱导光解和 热解方法。 薄膜在室温下是亚稳态的 温度和大气压力，因此不需要 平衡方法来生长它们。 脉冲激光照射 局部引入加热和瞬态原子激发， 形成亚稳相。 这些材料将在 在硅上的氧化镁和碳化硅上外延 衬底，其中存在多组主晶格平面， 与薄膜相匹配。 金刚石薄膜将被掺杂 在原位激光化学气相沉积过程中， 掺杂剂气体进入生长室。 中强调 研究将是外延生长的基本方面， 包括缺陷形成的分析，以及 弹性应变和界面应力的分布。的 薄膜将使用高分辨率和 分析透射电子显微镜，卢瑟福 背散射光谱，二次离子质谱， 扫描俄歇电子能谱，电子能谱 化学分析、拉曼和红外光谱技术 将用于表征化学成分和 键合特性 一些电影将被评估为 机械和电气性能。 金刚石和氮化硼是所有材料中最坚硬的 并可用于诸如切割、切割等应用中 工具和耐磨涂层。 的其他有用属性 金刚石具有高介电强度、化学惰性 光学透明，大带隙，高电学性能， 电阻率和高导热性。 这些属性 使该材料潜在地可用于半导体器件 适用于高温和高辐射环境 环境.