SGER: Neutron Transmutation Doping of Diamond Films for Radiation Hardened Devices

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9977896KasichainulaEpitaxial or textured large grain size diamond films with n-type dopant activity and semiconducting behavior have potential for high temperature, high speed, high dose and high power electronic devices. Hitherto, attempts to deposit diamond films with n-type dopant activity that can generate high carrier concentration with high mobility have been unsuccessful. The PI proposes to perform proof-of principle studies to overcome this limitation by the novel technique of neutron transmutation doping of double donors. The proposed research consists of deposition of large grain size (100) oriented diamond films on silicon (100) wafer substrates. A second layer of diamond will be deposited with isotope enriched 31Si and 10B dopants. Neutron transmutation followed by annealing and passivation of radiation induced defects will be used to achieve n-type activity from 31P and 7Li dopants. The ratio of n-type carrier concentration from 31P and 7Li to that of p-type from non-transformed 10B dopants will be enhanced by performing neutron transmutation at high neutron fluence. Carrier mobility will be improved by annealing in nitrogen ion ambient for radiation induced defect reduction and passivation with nitrogen ions.***