The Metal-Insulator Transition in Compensated Silicon

补偿硅中的金属-绝缘体转变

• 批准号: 8704331
• 负责人: Donald Holcomb
• 金额: --
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-05-15 至 1991-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8704331&HistoricalAwards=false
• 关键词: Metal; Insulator; Transition; Compensated; Silicon

High concentrations of donor or acceptor impurities in silicon, the omnipresent technical material of the computer age, produce a metallic system rather than a semiconductor. The characteristics of the transition from metallic to insulating properties as the impurity concentration is decreased have been of interest for many years but particularly since about 1980 as a result of a confluence of new experiments and new theories. In spite of these advances, a satisfactory description of some unusual electrical transport and magnetic properties of the classic semiconductor system, n-type silicon remains elusive. Samples of doubly-doped ("compensated") silicon are available for these studies. New theories connect a description of the electrical conductivity to unusual magnetic properties which have been observed in samples with electron concentration near the critical concentration for the transition from metal to insulator. By comparing properties of our samples of compensated silicon with those of uncompensated silicon, a test of the validity of current theory is possible. These properties will be measured to make that test.

高浓度的供体或受体杂质， 硅，计算机时代无所不在的技术材料， 产生金属系统而不是半导体。 的 从金属到绝缘过渡的特征 随着杂质浓度的降低， 多年来，特别是自1980年以来， 这是新实验和新理论结合的结果。 在 尽管取得了这些进展，但对一些 不寻常的电输运和磁性能的 在典型的半导体系统中，n型硅仍然是难以捉摸的。 双掺杂（“补偿”）硅样品可用于 这些研究。新理论将对 导电性到不寻常的磁性， 在电子浓度接近 从金属过渡到金属的临界浓度 绝缘体 通过比较我们的补偿样品的性质， 硅与那些未补偿硅，测试的 当前理论的有效性是可能的。 这些属性将 来做这个测试